Innoscience Technology announced the INS1001DE which is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications. The new gate driver has dual non-inverting and inverting PWM inputs, enabling flexible operation with the controller, optocoupler, and digital isolator. Independent Pull-up and Pull-down outputs facilitate the control of turn-on and turn-off speeds. Driver […]
Transistor
2000 V, SiC MOSFETs and diodes address solar and EV charging applications
Infineon Technologies AG introduces the new CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers’ demand for increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the […]
MOSFET power switches protect 12 V automotive circuits
Diodes Incorporated has introduced its first automotive-compliant, dual-channel, high-side power switches—the ZXMS82090S14PQ, ZXMS82120S14PQ, and ZXMS82180S14PQ—as an expansion of its IntelliFET self-protected MOSFET portfolio. These intelligent switches deliver high power within a compact footprint while also providing robust protection and diagnostic capabilities. The series is designed for driving 12V automotive loads, such as LEDs, bulbs, actuators, and motors […]
650V super junction N-Channel MOSFETs
Central Semiconductor announces the introduction of several new 650V Super Junction N-Channel MOSFETs designed for high-voltage, fast-switching applications. The latest additions, available in TO-220FP packaging, include: 7-650 (4.7A) 3-650 (7.3A) CDMSJ22010-650 (10A) 8-650 (13.8A) CDMSJ22029-650 (29A) The Super Junction MOSFETs feature a unique die structure, which supports high voltage with comparatively low on-resistance and fast […]
Modelithics releases Tagore GaN RF power transistor model
Modelithics and Tagore Technology announce the release of a new Modelithics non-linear model for Tagore Technology TA9210D RF GaN transistor. Modelithics is the leading independent provider of linear and non-linear RF/microwave models and Tagore Technology is a fabless semiconductor company providing gallium-nitride-on-silicon carbide (GaN-on-SiC) and gallium-nitride-on-silicon (GaN-on-Si) solutions for RF and power-management applications. This large…
SiC half-bridge power module for hi-rel applications
Solitron Devices announced the introduction of the SD11487, the industry’s first hermetically sealed Silicon Carbide (SiC) Power Module for high-reliability applications. With a unique hermetic packaging format, the 51mm x 30mm x 8mm outline is the smallest hermetically sealed high reliability, high voltage, half-bridge on the market. The integrated format maximizes power density while […]
12 V SiC MOSFETs boast RDS(on) values of 40 Ω and 80 Ω
Nexperia announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases that will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with […]
New GaN FETs for soft switching applications
Central Semiconductor announces the introduction of several new Gallium Nitride (GaN) FETs. The latest additions include the CCSPG1060N (100V, 60A) in a CSP3.5X2 package, the CDF56G6511N (650V, 11.5A) in a DFN5X6A package, and the CDF56G6517N (650V, 17A) in a DN5X6A package. Additional devices in this line are available on demand, as well as the option […]
GaN switcher IC delivers up to 85 W without heatsink
Power Integrations has released the world’s highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN switch. The new device significantly reduces switching losses to less than a third compared to equivalent silicon devices, achieving power conversion efficiency as high as 93% and delivering up to 85 W without the need for a heatsink. […]
600 V SJ MOSFET cuts series resistance
Magnachip Semiconductor Corporation announced that the Company released its 6th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology. This 6th-generation 600V SJ MOSFET (MMD60R175S6ZRH) was built on the 180nm microfabrication process and Magnachip’s latest design technology. This sophisticated technology improves upon the previous generation of SJ MOSFETs by narrowing the […]