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Automotive embedded flash added to 180 nm high-voltage CMOS technology line

April 15, 2021 By Redding Traiger

X-FAB Silicon Foundries has introduced a new Flash memory capability for its XP018 high-voltage automotive process. This new Flash IP leverages X-FAB’s already widely proven Silicon Oxide Nitride Oxide Silicon (SONOS) technology, which offers a combination of elevated levels of performance and best-in-class reliability. Fully compliant with stringent AEC100-grade 0 automotive specification, it can withstand operation across a -40°C to 175°C temperature range and fully supports the functional safety levels specified by ISO 26262.

It is supplied in a 32 KByte array size, following an 8K x 39-bit configuration, with a 32-bit data bus. A further seven bits are dedicated to Error Code Correction (ECC) so that zero-defect reliability in the field is assured. X-FAB’s proprietary XSTI embedded Non-Volatile Memory (NVM) IP test interface has also been included in order to enable full serial access to the memory.

As this automotive-grade Flash IP is capable of running on a single 1.8 V power supply, it is well-suited for low-power designs. The addition of a built-in self-test (BIST) module is pivotal in enabling effective memory testing, as well as enabling comprehensive product debugging. X-FAB is also able to provide a full NVM test service to customers if required.

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Filed Under: Embedded, Microcontroller Tips, Storage Tagged With: xfabsiliconfoundaries

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