Power Integrations announced the SCALE EV family of gate-driver boards for Infineon EconoDUAL modules. Suitable for original, clone and new SiC variants, the driver targets high-power automotive and traction inverters for EV, hybrid and fuel-cell vehicles including buses and trucks as well as construction, mining and agricultural equipment. SCALE EV board-level gate drivers incorporate two […]
Power Electronic Tips
2-kV SiC MOSFETs feature low losses, hard switching capability
The increasing demand for high-power density is pushing developers to adopt 1500 V DC links in their applications to increase the rated power-per-inverter and reduce system costs. However, 1500 V DC-based systems also pose more challenges to the system design, such as fast switching at high DC voltage, which typically requires a multi-level topology. This leads […]
High-power 650/800 V-rated GaN modules feature low on resistance, high efficiency
Navitas Semiconductor has announced the NV6169, a new high-power 650/800 V-rated GaNFast power IC with GaNSense technology to address higher-power applications such as 400-1000 W 4K/8K TVs and displays, next-generation gaming systems, 500 W solar microinverters, 1.2 kW data-center SMPS, and up to 4 kW / 5 hp motor drives. GaN is a next-generation power […]
Data center supply billed as world’s first 100W/in3 with 80 plus titanium efficiency
GaN Systems a leading global provider of computing power infrastructure and services, introduced the 3kxFusion W PSU, the world’s first 100W/in3 with 80 Plus Titanium efficiency solution. This groundbreaking data center power supply is displayed in the GaN Systems booth #509 (Hall 9) at PCIM Europe 2022. The increasing demand for more data and power combined […]
eGaN 100-V FETs feature lower gate charges, zero reverse-recovery losses
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. The EPC2071 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input DC-DC for new servers and artificial intelligence. […]
MOSFETS feature low on resistance for high power density
STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel super-junction multi-drain silicon power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G infrastructure to flat-panel televisions. The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have very low on-resistance (RDS(on)) per unit area, which maximizes power density and permits compact system dimensions. Each has the […]
8-inch GaN-on-Si device maker signs with WPG
Innoscience Technology has signed a global distribution agreement with WPG Holdings (WPG), giving customers in all parts of the world access to Innoscience’s leading high and low voltage normally-off (enhancement mode) GaN HEMTs. Dr Denis Marcon, General Manager, Innoscience Europe comments: “Our aim is to ensure that every power electronics designer – no matter where they […]
Analyzer checks out WBG power devices
The new PD1550A Advanced Dynamic Power Device Analyzer is a next-generation Double-Pulse Tester (DPT) with enhanced capabilities that enable the testing of entire power modules faster and easier than ever before. Power modules are used in various applications such as electric vehicles (EV), solar power inverters, trains, home appliances and aircraft due to ease of […]
Relays designed for higher reliability in isolated high-voltage environments
Building on more than two decades of experience developing new isolation manufacturing technologies and integrated circuits (ICs) for high-voltage systems, Texas Instruments introduced new portfolio of solid-state relays, including automotive-qualified isolated drivers and switches, that deliver industry-leading reliability to help make electric vehicles (EVs) safer. The new isolated solid-state relays also provide the smallest solution […]
Super junction 600-V MOSFETs boast fast reverse recovery time
ROHM Semiconductor announced that they have added seven new devices, the R60xxVNx series, to the PrestoMOS lineup of 600V Super Junction MOSFETs which stand out for their class-leading low ON resistance and the industry’s fastest reverse recovery time (trr). The R60xxVNx series is optimized for power circuits in industrial equipment requiring high power, such as servers, […]
