Microchip’s IGBT 7 series provide engineers with power control for a wide range of applications. Microchip Technology announced a series of IGBT 7 devices in several packages, topologies, current ranges, and voltage ranges. According to Microchip, the devices feature increased power capability, lower power losses, and compact device sizes. The company says these devices meet […]
Transistor
150 V MOSFET claims new low for on resistance
Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6×5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3 % and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power […]
Mitigate reverse recovery overshoot in MOSFET body diodes
Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster switching times, significantly reducing switching losses. These advantages stem from the unique electrical and material properties of SiC-based devices — snappy reverse recovery inherent to the structure of […]
Bipolar junction transistors show their muscle
Recent enhancements to the classic BJT show that the classic transistor has plenty of life left and can challenge SiC and GaN devices in some power applications. Amidst the advances in CMOS and wide bandgap semiconductor technology, you can easily forget that the first transistor invented by William Shockley in 1949 was a bipolar junction […]
What are bidirectional GaN power ICs good for?
Bidirectional GaN power ICs are designed for various applications, from motor drives and renewable energy inverters to USB chargers, portable electronics, E-bikes, and more. This article presents examples of the application possibilities with bidirectional GaN switches. GaN high electron mobility transistors, HEMTs, or HFETs, have been fabricated using a 600 V process that produces devices […]
Low on resistance SiC JFET TOLL package for circuit breakers
Qorvo announced the industry’s first 4-milliohm silicon carbide (SiC) junction field effect transistor (JFET) in a TOLL package. It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, superior thermal performance, small size, and reliability are paramount. With RDS(on) of just 4 milliohms, the UJ4N075004L8S offers the industry’s lowest on-resistance among the 650V […]
SiC MOSFETs optimized for AI, EV, and solar systems
Navitas Semiconductor announces the launch of their new Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs, designed for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside chargers, and solar/energy-storage systems (ESS). This new portfolio covers industry-standard packages from D2PAK-7 to TO-247-4, tailored for high-power, high-reliability applications. The G3F […]
GaN portfolio expanded to include high- and medium–voltage families
Infineon Technologies AG announces two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices which now enable customers to use Gallium Nitride (GaN) in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization. These two product families are manufactured on high-performance […]
Next-gen, 400 V MOSFET family for advanced AI server power supplies
With the increasing power requirements of Artificial Intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand for high-level GPUs, which could consume 2 kW or more per chip by the end of the […]
How to quantify pulse current capability of SiC FETs
Silicon Carbide FETs go beyond silicon to extend reach to high pulse currents in power conversion applications. Wide bandgap (WBG) semiconductor devices, such as Silicon Carbide (SiC) field-effect transistors (FETs), are renowned for their minimal static and dynamic losses. Beyond these attributes, this technology can endure high pulse currents, proving particularly advantageous in applications like […]
