Solitron Devices is pleased to announce the introduction of the SD11740 , 1200V Silicon Carbide (SiC), low RDS(on) MOSFET. Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications, Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a SOT-227, the SD11740 offers ultra-low RDS(on) of 8.6mΩ. The SOT-227 style […]
Transistor
700V and 1200V vertical GaN devices demonstrate >1 MHz switching at 1.4kV rated voltage
NexGen Power Systems, Inc. announced engineering sample availability and production schedules for its industry-best 700V and 1200V NexGen Vertical GaN semiconductor devices. NexGen’s 1200V Vertical GaN e-mode Fin-jFETs are the only wide-band-gap devices to have successfully demonstrated >1 MHz switching at 1.4kV rated voltage. Sampling on a limited basis to strategic customers and partners since […]
Controller-GaN FET combo for designs of 140 W small fast-charging devices
EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V – 24 V to a regulated 5 V – 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek […]
Automotive-grade devices available in tiny 32.7 mm x 22.5 mm package
STMicroelectronics has introduced five power-semiconductor bridges in popular configurations, housed in ST’s advanced ACEPACK SMIT package that eases assembly and enhances power density over conventional TO-style packages. Engineers can choose from two STPOWER 650V MOSFET half bridges, a 600V ultrafast diode bridge, a 1200V half-controlled full-wave rectifier, and a 1200V thyristor-controlled bridge leg. All devices meet […]
SiC devices provide high-efficiency for energy infrastructure and industrial apps
onsemi introduced “EliteSiC” as the name of its silicon carbide (SiC) family. This week, the company will showcase three new members of the family – the 1700 V EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes – at the Consumer Electronics Show (CES) in Las Vegas. The new devices provide reliable, high-efficiency performance for energy […]
Power MOSFETs include PQFN dual-side cooled 25-150 V devices
The design of future power electronic systems is continuously pushed to improve state-of-the-art performance and power density. Supporting this trend, Infineon Technologies AG launches a new Source-Down 3.3 x 3.3 mm² PQFN product family in the 25-150 V classes with Bottom-Side (BSC) and Dual-Side Cooling (DSC) variants. The new product family provides significant enhancements on […]
High SOA 30-V MOSFET features low on-resistance
Alpha and Omega Semiconductor Limited announced the release of, AONS30300, a 30V MOSFET with low on-resistance. The AONS30300 features a high Safe Operating Area (SOA) capability making it ideally suited for demanding applications such as hot swap and eFuse. A high SOA is essential in server hot-swap applications where the MOSFET needs to be robust to […]
High SOA MOSFET optimized for 12-V hot swap applications
Alpha and Omega Semiconductor Limited announced the release of, AONS30300, a 30V MOSFET with low on-resistance. The AONS30300 features a high Safe Operating Area (SOA) capability making it ideally suited for demanding applications such as hot swap and eFuse. A high SOA is essential in server hot-swap applications where the MOSFET needs to be robust to […]
GaN 3-phase BLDC motor drive delivers 20 A
EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower Stage GaN IC with embedded gate driver function and two GaN FET with 5.2 mΩ typical RDS(on). The EPC9176 operates from an input supply voltage between 20 V and 80 V and can deliver up to 28 Apk […]
Fast body diode MOSFET delivers 0.045 Ω at 10 V
Vishay Intertechnology, Inc. introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low-profile PowerPAK 10 x 12 package. Providing high efficiency and power density for telecom, industrial, and computing applications, the Vishay Siliconix n-channel SiHK045N60EF slashes on-resistance by 29 % compared with previous-generation devices while delivering a 60 % lower […]
