Comparisons of transistor device models and simulation techniques illustrate which approach works best for specific design scenarios. Lei Kou, Lucas Lu, GaN Systems When designing a new system based on Gallium Nitride (GaN) power transistors, simulation provides engineers with a powerful design optimization tool. Through simulation, designers can estimate system efficiency, choose the appropriate device […]
Transistor
IEDM: Mating GaN with CMOS
Gallium nitride (GaN) is a promising material for RF/mmWave and power applications because of its ability to operate at higher voltages and frequencies than silicon while exhibiting lower losses. The integration of GaN technology with CMOS technology, especially if built using mainstream silicon CMOS tools and fabrication processes, could usher in inexpensive next-generation PC/mobile devices […]
40-V, 1.3-milliohm eGaN FETs optimized for high power density apps
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. The EPC2067 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse […]
Comparing IGBT and SiC MOSFET PIMs in solar inverters
Side-by-side performance comparisons can show where silicon-carbide excels in PV installations. Steven Shackell • onsemi According to the International Energy Agency, solar power (PV) installations are on track to reach an installed capacity of 3,300 TWh by 2030, a yearly growth rate of 15% from 2019. Installations will be a mix of micro, mini and […]
Dual MOSFETs deliver ±40V/±60V withstand voltage required for 24-V input
ROHM Semiconductor announced the QH8Mx5/SH8Mx5 series of dual-MOSFET products (N-channel + P-channel) featuring ±40V/±60V withstand voltages. The devices are ideal for driving motors in base stations (cooling fans) and industrial applications, such as factory automation equipment requiring 24V input. In recent years, MOSFETs have become increasingly required to ensure sufficient margin against voltage fluctuations by providing 40V and 60V withstand […]
The evolution of smart MOSFET technologies
A review of MOSFET advances helps predict where the technology is likely to head. Ashita Mirchandani, Bastian Lang • Infineon Technologies The past 50 years have seen unprecedented changes enabled by technology. The trend will continue with emerging technologies such as e-mobility, the Internet of Things (IoT), artificial intelligence, connectivity and 5G. At the heart […]
eGaN FETs support 48–12V- DC-DC circuits ranging from 500 W to 2 kW
The EPC2069 (1.6 mΩ typical, 40 V) eGaN FET is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse recovery losses enable high frequency operation of 1 MHz, and beyond, at high efficiency in a tiny 10.6 mm2 footprint for […]
New 6-mohm SiC FET handles 750 V
UnitedSiC has responded to the power designer’s requests for higher-performance, higher-efficient SiC FETs with the announcement of the industry’s best 750V, 6mohm device. At an RDS(on) value of less than half the nearest SiC MOSFET competitor, the new 6mohm device also provides a robust short-circuit withstand time rating of 5s. Today’s announcement includes 9 new […]
SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]
IBGT-based power modules handle up to 750 A
Infineon Technologies AG launches new current ratings for its EconoDUAL 3 portfolio with TRENCHSTOP IGBT7 chips. With the broad range of current classes from 300 A up to 900 A, the portfolio offers inverter designers a high degree of flexibility while also providing increased power density and performance. In addition to solar and drive applications, the portfolio […]