Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm x 7mm QFN package. The new device offers low RDS(ON) of 180mOhm and fast switching to deliver a highly efficient, low-cost power solution in a small footprint for a variety of […]
Transistor
IGBTs incorporate 650-V SiC Schottky barrier diode
ROHM Semiconductor announced the RGWxx65C series of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode. The devices, qualified under the AEC-Q101 automotive reliability standard, are ideal for automotive and industrial applications that handle high power, such as photovoltaic power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles (xEVs). The RGWxx65C […]
LDMOS power transistors optimized for RF power amplifiers
STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimized for RF power amplifiers (PAs) in a variety of commercial and industrial applications. Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a […]
NXP adds GaN to 5G amplifier modules
Multi-chip module integrates GaN on top of LDMOS to improve power amplifier energy efficiency.
650-V IGBTs target PFC apps in A/C, welding
Infineon Technologies AG introduces the new 650 V TRENCHSTOP 5 WR6 family in discrete housing. The family comes in a TO-247-3-HCC package and offers a broad portfolio comprising 20 A, 30 A, 40 A, 50 A, 60 A, and 70 A current ratings. The devices can easily be used for replacing previous technologies like Infineon’s […]
Tiny eGaN FETs target BLDC motor drives, Lidar apps
EPC advances the performance capability while lowering the cost for off-the-shelf gallium nitride transistors with the introduction of EPC2065 and EPC2054. The EPC2065 is an 80 V, 3.6 mΩ, 221 Apulsed eGaN FET in a 7.1 mm2 chip-scale package. The small size and superior efficiency reduce overall power system size and weight and make it […]
GaN transistors, ICs feature radiation hardening
EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher […]
optical-isolated IGBT, power module drivers fit in cramped quarters
Renesas Electronics Corporation expanded its family of 8.2mm creepage photocouplers with three new devices designed for operation in harsh industrial automation equipment, solar inverter, and EV charger operating environments. Measuring a mere 2.5mm x 2.1mm in an LSSO5 package, the world’s smallest optical isolated IGBT drivers and intelligent power module (IPM) driver reduce PCB mounting […]
Thermal interface materials sport low compression force at high compression rates
SARCON PG45A from Fujipoly is one of the industry’s newest high-performance thermal interface materials that exhibits a very low compression force even at high compression rates. This makes the putty-like TIM a great choice for applications that have delicate or wide-variation component heights and require material compression up to 90%. This low modulus thermal gap […]
48-to-12-V LLC converter handles 1 kW
EPC announces the availability of the EPC9149, a 1 kW-capable 48 V input to 12 V output LLC converter that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40 V EPC2024 GaN FETs. The board is the size of DOSA-standard ⅛th brick format, measuring […]
