Magnachip Semiconductor Corporation announced that the Company released its 6th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology. This 6th-generation 600V SJ MOSFET (MMD60R175S6ZRH) was built on the 180nm microfabrication process and Magnachip’s latest design technology. This sophisticated technology improves upon the previous generation of SJ MOSFETs by narrowing the […]
Transistor
SMD-based, GaN TOLL FETs are drop-in replacements for any e-mode devices
Transphorm, Inc. today introduced three SuperGaN® FETs in TOLL packages with on-resistances of 35, 50, and 72 milliohms. Transphorm’s TOLL package configuration is industry standard, meaning the SuperGaN TOLL FETs can be used as drop-in replacements for any e-mode TOLL solution. The new devices also offer Transphorm’s proven high voltage dynamic (switching) on-resistance reliability that […]
MOSFET package design improves safety in high-voltage circuits
Littelfuse, Inc. announced the launch of CPC3981Z, an 800 V, 100 mA, 45 Ohm, Small Power N-Channel Depletion Mode MOSFET. Compared to a standard SOT-223 package, this new product’s SOT-223-2L package features a removed middle pin. That increases the drain-gate pin spacing from 1.386 millimeters to more than 4 millimeters. The extended creepage distance is beneficial in […]
500 mA dual RETs offer high-power load switching for space-constrained applications
Nexperia released a new series of 500 mA dual resistor-equipped transistors (RET) in ultra-compact DFN2020(D)-6 packaging. These devices have been designed for load switching in wearables and smartphones as well as for use in digital circuits with higher power requirements. Such as space-constrained computing, communications, industrial, and automotive applications. Notably, the RET in DFN configuration […]
MOSFETs for high-voltage ECUs feature EC7 co-packed diode with emitter-controlled design
Infineon Technologies AG expands its 7th generation TRENCHSTOP IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature a cutting-edge EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions. Using the latest micro-pattern trench technology, the […]
600 V MOSEFT offers low typical on-resistance of 0.051 Ω at 10 V
Vishay Intertechnology, Inc. introduced a new fourth-generation 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by 48.2 % while offering a 59 % lower resistance times gate charge, a key figure of merit […]
50 V and 120 V MOSFETs in TOLx packages for 24 V to 72 V- supplied high-power ECUs
The electrification of the transportation system is advancing continuously. In addition to passenger cars, 2- and 3-wheelers as well as light vehicles are increasingly being electrified. Therefore, the automotive market for Electronic Control Units (ECUs) powered by 24 V-72 V is expected to keep growing in the coming years. To address this development, Infineon Technologies […]
JFET line adds 16 new devices
Solitron Devices announces a substantial expansion of our Junction Field-Effect Transistor (JFET) portfolio of products. Expanding on the existing JANTXV-qualified product line, Solitron has added 16 new N channel devices offered with COTS and hi reliability screening options. Packaged in hermetic TO18/TO-72/TO-78 packages, this series is designed for harsh environments such as space, avionics, and […]
MOSFETs for battery protection circuits target mobile devices
Magnachip Semiconductor Corporation announced that the Company has released four new MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)*, using Super-Short Channel technology, to further expand Magnachip’s seventh-generation MXT LV MOSFET line-up for battery protection circuits of mobile devices. Super-Short Channel is Magnachip’s latest design technology to reduce Ron (the resistance of MOSFETs during on-state operation) by shortening the…
GaN driver sinks and sources up to 3A gate current to connected transistor
STMicroelectronics’ first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions, and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection. The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up […]