The new HiperLCS-2 chipset brings Power Integrations’ unique 600 V FREDFETs and magneto-inductive FluxLink technology to the LLC topology. The result is 98% efficiency and 40% component-count reduction in LLC resonant power converters up to 250 W, eliminating bulky heatsinks or unreliable optocouplers. One-half of the dual-chip solution is the HiperLCS2-HB half-bridge power device utilizing […]
Transistor
Power 150-V MOSFET sports low ON resistance
Toshiba Electronic Devices & Storage Corporation has launched a 150V N-channel power MOSFET “TPH9R00CQH” that uses the latest-generation (*1) process, “U-MOSX-H,” and that is suitable for use in switching power supplies for industrial equipment — including those deployed in data centers and communications base stations. TPH9R00CQH has drain-source on-resistance about 42% lower than TPH1500CNH, a […]
140-W supply design employs high- and low-voltage GaN switches to boost efficiency
Innoscience Technology announced a new ultra-high-density 140W power supply demo that uses the company’s high- and low-voltage GaN HEMT devices to achieve efficiencies of over 95% (230VAC; 5V/28A). Measuring just 60x60x22mm (2.4×2.4×0.9in) the PSU has a class-leading power density of 1.76W/cm3 (29W/in3). The 140W 300kHz AC/DC adapter uses a CRM Totem Pole PFC + AHB […]
SiC power MOSFETs handle 3.3 kV, feature low ON resistance
Microchip Technology Inc. announced the expansion of its SiC portfolio with the release of the industry’s lowest on-resistance [RDS(on)] 3.3 kV SiC MOSFETs and highest current-rated SiC SBDs available in the market, enabling designers to take advantage of ruggedness, reliability, and performance. With the expansion of Microchip’s SiC portfolio, designers are equipped with the tools to develop […]
2 W dc-dc converters now in SIP-7 format
Flex Power Modules has introduced a range of encapsulated, through-hole, 2 W DC/DC converters in the industry-standard SIP-7 format. The series includes nominal 12 V, 15 V, and 24 V inputs, and a selection of dual, unregulated outputs are available, suitable for asymmetrical positive and negative gate drive voltages for a wide variety of semiconductor […]
Rad-hard GaN transistors sport super-low on resistance
EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, […]
All-silicon reference design covers 45-W fast charging circuit
Silanna Semiconductor has further expanded its family of silicon- and GaN-based fast charger reference designs with an all-silicon option that will significantly reduce the time needed to develop high-density 45W applications. Supplied as a fully production-ready solution, the new RD-24 design provides everything needed to rapidly prototype and test a fully functional 45W 1C charger. […]
N-channel JFET switch replaces discontinued NXP/philips BF510 devices
Linear Integrated Systems, Inc. announced it has released a direct, pin-for-pin replacement for the Philips/NXP BF510. Per an NXP discontinuation notice published in June 2020, this part is no longer manufactured or supplied by NXP. The new Linear Systems’ LSBF510 is an N-Channel Single JFET for applications up the VHF range. The part’s features are: […]
GaN HEMTs for hi-rel apps have NASA level 1 screening flow
Teledyne e2v HiRel announces the addition of new space screened versions of its popular 650 V, 60 A high-reliability gallium nitride high electron mobility transistors (GaN HEMTs). The new parts go through NASA Level 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing if desired. Typical applications […]
100-V high-speed 20-MHz FET/GaN transistor driver comes in flip chip die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules, and space motor drives. The TD99102 is an integrated high-speed […]
