Alpha and Omega Semiconductor Limited announced the release of, AONS30300, a 30V MOSFET with low on-resistance. The AONS30300 features a high Safe Operating Area (SOA) capability making it ideally suited for demanding applications such as hot swap and eFuse. A high SOA is essential in server hot-swap applications where the MOSFET needs to be robust to […]
Transistor
High SOA MOSFET optimized for 12-V hot swap applications
Alpha and Omega Semiconductor Limited announced the release of, AONS30300, a 30V MOSFET with low on-resistance. The AONS30300 features a high Safe Operating Area (SOA) capability making it ideally suited for demanding applications such as hot swap and eFuse. A high SOA is essential in server hot-swap applications where the MOSFET needs to be robust to […]
GaN 3-phase BLDC motor drive delivers 20 A
EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower Stage GaN IC with embedded gate driver function and two GaN FET with 5.2 mΩ typical RDS(on). The EPC9176 operates from an input supply voltage between 20 V and 80 V and can deliver up to 28 Apk […]
Fast body diode MOSFET delivers 0.045 Ω at 10 V
Vishay Intertechnology, Inc. introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low-profile PowerPAK 10 x 12 package. Providing high efficiency and power density for telecom, industrial, and computing applications, the Vishay Siliconix n-channel SiHK045N60EF slashes on-resistance by 29 % compared with previous-generation devices while delivering a 60 % lower […]
Dispelling Myths: Don’t believe it when they say you need a bipolar gate drive for eGaN FETs
Use of a negative gate drive can lead to a larger voltage drop during deadtime and severe losses. Andrea Gorgerino, EPC GaN devices have gone from initial R&D to mainstream designs over the last 15 years. Unfortunately there are many misunderstandings left-over from those early-stage developments or dead-end technology branches. One of the most pernicious […]
Integrated ac-dc power stages handle up to 950 V
Optimized performance, efficiency, and reliability in high-voltage power supplies need to be combined with reduced bill-of-material (BOM) count and cost, as well as lower design efforts. With its 5 th generation fixed-frequency (FF) CoolSET portfolio, Infineon Technologies AG offers the right components to meet these needs and effectively manage the critical design trade-offs. The new 800 V and 950 V […]
Turnkey GaN 140-W charger reference design covers USB PD3.1, single port type-c
GaN Systems announced the availability of a new turnkey 140W AC/DC charger reference design with USB PD3.1, Single Port Type-C Output. Compared to silicon-based chargers, this design is 40% lighter and 50% smaller, featuring an ultra-high-power density of 23W/in3. This design enhances GaN Systems’ portfolio (65W, 100W, 140W, 250W) of turnkey charger solutions for the consumer electronics market, […]
IGBTs feature FRDs and low thermal resistance
Bourns, Inc. entered the insulated-gate bipolar transistor (IGBT) market with the Company’s first high-efficiency 600 V/650 V discrete product line co-packaged with a fast recovery diode (FRD). Designed using advanced trench-gate field-stop technology that provides greater control of dynamic characteristics, the five new Bourns Model BID Series discrete IGBTs deliver lower collector-emitter saturation voltage (VCE(sat)) and lower switching losses compared […]
JFET optimized for high-end sensor front-end amplification
Linear Systems has announced the re-release of its LSK489 discrete component with specialized parameter grading. The LSK489 is one of the world’s premier JFETs optimized for use in high-end sensor front-end amplification designs. The LSK489 is a monolithic dual ultra-low-noise junction field effect transistor (JFET) optimized for use in high-end sensor front-end amplification designs. Linear […]
What’s the difference between Shockley and Schottky diodes?
Neither a Shockley diode nor a Schottky diode are single p-n junction devices. A Shockley diode has a four-layer thyristor structure with a typical forward drop of 800 mV. It’s called a diode because it has two leads. A Shockley diode is essentially a SCR with the gate not connected. In a Schottky diode a […]