ROHM Semiconductor announced that they have added seven new devices, the R60xxVNx series, to the PrestoMOS lineup of 600V Super Junction MOSFETs which stand out for their class-leading low ON resistance and the industry’s fastest reverse recovery time (trr). The R60xxVNx series is optimized for power circuits in industrial equipment requiring high power, such as servers, […]
Transistor
Rad-hard 200-V GaN transistor boasts ultra-low on-resistance, tiny footprint
EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 mΩ, 80 APulsed, rad-hard GaN FET in a small 5.76 mm2 footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, […]
40-V MOSFET targets BDC motor apps in vehicles
Magnachip Semiconductor Corporation announced that the company has released a new 40V Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) to control Brushless Direct Current (BLDC) motors for automotive applications. Given concerns about global climate change and corresponding efforts to reduce carbon emissions, the Electric Vehicle (EV) market is projected to grow significantly. Omdia, a global market research firm, […]
SiC 1.2-kV MOSFET features low on resistance
Solitron Devices is anouncing the introduction of the SD11720, 1200V Silicon Carbide (SiC), low RDS(on) MOSFET. Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a TO-247 the SD11720 is ideally suited for EV, Renewable Energy, Motor […]
Common-source dual GaN FET features 58 mΩ RDS(on), 20-A pulsed output current
EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current. The EPC2221 can be used in lidar systems for robots, surveillance systems, drones, autonomous cars, and vacuum cleaners. The low inductance and capacitance of the EPC2221 allow fast switching (100 […]
Measurement system handles GaN and SiC semiconductor analysis
The new DL-ISO High Voltage Optically Isolated 1-GHz Probe and Power-Device test software, when combined with LeCroy High Definition Oscilloscopes (HDO), are said to offer the most accurate electrical characterization of gallium nitride (GaN) and silicon carbide (SiC) power semiconductor devices. For more than thirty years, engineers have used silicon (Si) metal-oxide-semiconductor field-effect transistor (MOSFET) […]
Chipset boosts efficiency, cuts component count in LLC converters
The new HiperLCS-2 chipset brings Power Integrations’ unique 600 V FREDFETs and magneto-inductive FluxLink technology to the LLC topology. The result is 98% efficiency and 40% component-count reduction in LLC resonant power converters up to 250 W, eliminating bulky heatsinks or unreliable optocouplers. One-half of the dual-chip solution is the HiperLCS2-HB half-bridge power device utilizing […]
Power 150-V MOSFET sports low ON resistance
Toshiba Electronic Devices & Storage Corporation has launched a 150V N-channel power MOSFET “TPH9R00CQH” that uses the latest-generation (*1) process, “U-MOSX-H,” and that is suitable for use in switching power supplies for industrial equipment — including those deployed in data centers and communications base stations. TPH9R00CQH has drain-source on-resistance about 42% lower than TPH1500CNH, a […]
140-W supply design employs high- and low-voltage GaN switches to boost efficiency
Innoscience Technology announced a new ultra-high-density 140W power supply demo that uses the company’s high- and low-voltage GaN HEMT devices to achieve efficiencies of over 95% (230VAC; 5V/28A). Measuring just 60x60x22mm (2.4×2.4×0.9in) the PSU has a class-leading power density of 1.76W/cm3 (29W/in3). The 140W 300kHz AC/DC adapter uses a CRM Totem Pole PFC + AHB […]
SiC power MOSFETs handle 3.3 kV, feature low ON resistance
Microchip Technology Inc. announced the expansion of its SiC portfolio with the release of the industry’s lowest on-resistance [RDS(on)] 3.3 kV SiC MOSFETs and highest current-rated SiC SBDs available in the market, enabling designers to take advantage of ruggedness, reliability, and performance. With the expansion of Microchip’s SiC portfolio, designers are equipped with the tools to develop […]