Microchip Technology Inc. announced the expansion of its SiC portfolio with the release of the industry’s lowest on-resistance [RDS(on)] 3.3 kV SiC MOSFETs and highest current-rated SiC SBDs available in the market, enabling designers to take advantage of ruggedness, reliability, and performance. With the expansion of Microchip’s SiC portfolio, designers are equipped with the tools to develop […]
Transistor
2 W dc-dc converters now in SIP-7 format
Flex Power Modules has introduced a range of encapsulated, through-hole, 2 W DC/DC converters in the industry-standard SIP-7 format. The series includes nominal 12 V, 15 V, and 24 V inputs, and a selection of dual, unregulated outputs are available, suitable for asymmetrical positive and negative gate drive voltages for a wide variety of semiconductor […]
Rad-hard GaN transistors sport super-low on resistance
EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, […]
All-silicon reference design covers 45-W fast charging circuit
Silanna Semiconductor has further expanded its family of silicon- and GaN-based fast charger reference designs with an all-silicon option that will significantly reduce the time needed to develop high-density 45W applications. Supplied as a fully production-ready solution, the new RD-24 design provides everything needed to rapidly prototype and test a fully functional 45W 1C charger. […]
N-channel JFET switch replaces discontinued NXP/philips BF510 devices
Linear Integrated Systems, Inc. announced it has released a direct, pin-for-pin replacement for the Philips/NXP BF510. Per an NXP discontinuation notice published in June 2020, this part is no longer manufactured or supplied by NXP. The new Linear Systems’ LSBF510 is an N-Channel Single JFET for applications up the VHF range. The part’s features are: […]
GaN HEMTs for hi-rel apps have NASA level 1 screening flow
Teledyne e2v HiRel announces the addition of new space screened versions of its popular 650 V, 60 A high-reliability gallium nitride high electron mobility transistors (GaN HEMTs). The new parts go through NASA Level 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing if desired. Typical applications […]
100-V high-speed 20-MHz FET/GaN transistor driver comes in flip chip die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules, and space motor drives. The TD99102 is an integrated high-speed […]
Discrete 750-V IGBTs optimized for automotive traction inverters
Infineon Technologies AG is launching the new EDT2 IGBTs in a TO247PLUS package. The devices are optimized for automotive discrete traction inverters and expand Infineon’s portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs meet and exceed the industry standard AECQ101 for automotive components. As a result, the devices […]
MOSFETs come in PQFN 2 x 2 mm 2 packages, sport 25 and 30-V ratings
Infineon Technologies AG introduced its new PQFN 2 x 2 mm 2 OptiMOS 5 25 V and 30 V product family. Combining thin wafer technology and packaging innovation, the new devices enable significant performance benefits in an extremely small form factor. OptiMOS 5 25 V and 30 V have been optimized for synchronous rectification in […]
Multistage Doherty MMIC drivers cover all sub-6GHz frequency bands
Ampleon introduces the B11G3338N80D push-pull 3-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands. This highly efficient multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations. The driver product family […]