Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production. The devices offer broadband high linearity features under low bias settings to […]
Transistor
What is d-GaN, e-GaN and v-GaN power?
Gallium-nitride (GaN) power semiconductors are well-established, but compared with silicon (Si) devices, GaN is still an evolving power device technology. Most power designers have at least explored the use of GaN, whether it’s been depletion-mode (d-GaN) normally-on devices, enhancement-mode (e-GaN) normally-off devices, a cascode combination of a Si MOSFET with a d-GaN device to form […]
Reference design details super-efficient bi-directional dc/dc converter
EPC announces the availability of the EPC9165, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 97 % peak efficiency in a small footprint. This solution is ideal for high-density and high-power 48V battery packs such as those required for eMobility and light mobility. The solution is scalable; two converters […]
N-channel MOSFETs deliver RDS(on) down to 0.65 mΩ
Vishay Intertechnology, Inc. introduced two new n-channel TrenchFET MOSFETs that increase power density, efficiency, and board-level reliability in telecom and industrial applications. To achieve these design goals, the 60 V SiJH600E and 80 V SiJH800E combine ultra-low on-resistance with high-temperature operation to +175 °C and high continuous drain current handling. Their space-saving PowerPAK® 8x8L package promotes board-level […]
Precision P-Channel MOSFET array designed for extremely low power, mostly-on apps
The first-to-market nano-power precision P-Channel EPAD MOSFET array comprises a matched-pair circuit is designed for the next generation of products requiring extremely low power applications and mostly-on operation. This MOSFET simplifies bias circuitry while optimizing power usage. Market segments using the MOSFET array are energy harvesting systems, automotive, medical, transportation, robotics, and any wireless product. […]
MOSFET gate drivers carry SPI interface
Battery systems for 48 V are used in multiple, growing market categories including Mild Hybrid Electrical Vehicles, trucks, e-wheelers, and battery packs for solar panels. These Li-ion battery systems need to be protected against negative and positive voltages. In addition, these batteries must be able to quickly and reliably disconnect from loads within microseconds, in the […]
Si MOSFETS boast GaN-like performance for fast switching, power conversion applications
SkyWater Technology and Applied Novel Devices, Inc. announced a major industry breakthrough with new transistor technology that offers significant benefits for fast switching power conversion applications. The power MOSFETs offer 2x lower output charge, near-zero reverse-recovery, and ultra-low Qoss enabled by AND’s proprietary channel engineering technology. In addition, these power MOSFETs offer superior specific on-resistance […]
Dedicated 8-inch, GaN-on-Si FET producer opens locations in US and Europe
Innoscience Technology who focuses on creating a global energy ecosystem based on high-performance, low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions, today announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is now poised to support customers through the addition of design and sales support facilities in Santa Clara, […]
Super junction 600-V MOSFETs target consumer, industrial apps
Magnachip Semiconductor Corporation announced that the company has launched 11 new generations of high-voltage 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs). The company has already released product samples and plans to begin mass production of them in March 2022. The new 2.5th generation (2.5G) 600V SJ MOSFETs were developed using new designs […]
Low-voltage MOSFETs feature low Rss(on) for smartphone battery PCMs
Magnachip Semiconductor Corporation announced the launch of a new generation Low-Voltage Metal Oxide Semiconductor Field Effect Transistors (LV MOSFETs) featuring lower Rss(on) for battery Protection Circuit Modules (PCMs) in smartphones. As demand for high-end 5G and LTE smartphones increases, extended battery life and strengthened protection features for batteries are becoming important. 5G phones, in particular, need long-lasting […]