Central Semiconductor introduces its new energy efficient, high-voltage UltraMOS MOSFETs designed to minimize total conduction losses while maximizing power density. The initial release of this new family consists of the CDM4-600LR (4A in a DPAK), CDM7-600LR (7A in a DPAK) and CDM22011-600LRFP (11A in a TO-220FP). The key energy efficiency characteristics of UltraMOSTM devices include lower rDS(ON) (as low as 0.3Ω) and lower total gate charge (as low as 11.59 nC). These devices well exceed the operational performance of similarly rated standard MOSFETs.
UltraMOS MOSFETs are ideal for power supplies, power factor correction and power inverter applications. A prime applications example would be the perfect pairing of an UltraMOS MOSFET with a Central Semi HyperFast rectifiers providing a superior high-speed operational benefit for phase shift compensation power factor correction, where these devices are. UltraMOS devices are available in industry standard packages as well as in custom packages. Sample devices are available upon request.
Central Semiconductor
www.centralsemi.com
Leave a Reply
You must be logged in to post a comment.