Central Semiconductor introduces its newest energy efficient, high-voltage UltraMOS MOSFET designed to minimize total conduction losses while maximizing power density. The CDM22012-800LRFP is a 12 A, 800 V MOSFET in the TO-220 Full Pack package. The low rDS(ON) of 0.37Ω and low total gate charge of 7.6 nC are key energy efficiency characteristics of this UltraMOS device, which surpass the operational performance of similarly rated standard MOSFETs.
The 800 V UltraMOS MOSFETs are ideal for power supplies, power inverters and the perfect pairing with Central’s HyperFast rectifiers, to provide a superior high speed operational benefit for phase shift compensation in power factor correction applications. UltraMOS devices are available in industry standard packages as well as in custom packages.
Central Semiconductor
www.centralsemi.com
Leave a Reply
You must be logged in to post a comment.