Cree’s current standard for SiC substrates is 100mm-diameter material.
Used in the production of lighting, power and communication components (including LEDs, power switching devices and RF power transistors for wireless communications), the significant increase in size of single-crystal SiC substrates to 150mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry, says Cree.
“We expect that 150mm substrates can reduce device cost, boost manufacturing output and expand our product range,” comments chief operating officer Steve Kelley.
