GaN device leverages bridgeless totem-pole PFC in supplies
Gallium nitride (GaN) based transistors have been around for years as has cascode mode in both linear and switch-mode circuits. With the newly announced TPH3212PS, JEDEC-qualified, cascode-configured device, Transphorm aims to hep engineers more successfully integrate GaN into their designs. The device eliminates the need for a bridge rectifier, parallel FETs, and additional passives for high-performance supplies leveraging bridgeless totem-pole PFC as opposed to standard PFC topology. “The robust and reliable cascode configuration,” say Luc Van de Perre, Director of sales for EMEA, “also eliminates the need for custom drivers and considerably increases the GaN FET’s gate safety margin.
Transphorm also exhibited the first redundant AC power supply from Telcodium using GaN technology (the 650V GaN FET) and previewed an AC-DC front-end power supply from Bel Power Solutions also built on the 650V GaN FET. This unit is certified 8-plus Titanium and also displayed the CE-Mark for the European Low Voltage Directive (LVD). Both products were included to demonstrate the practical applications of Tranphorm’s device when building power supplies that implement bridgeless totem-pole topology.
Find more details on Transphorm’s GaN device on Power Electronics Tips here.
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