Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, has released a new 28V, 30W GaN HEMT bare die.
Designed for up to 8GHz operation, the new 28V GaN HEMT die exhibits 12dB typical small signal gain at 8GHz, 17dB typical small signal gain at 4GHz, and 30W typical PSAT. Additionally, due to the superior material properties of GaN compared to silicon (Si) and gallium arsenide (GaAs), the new 28V, 30W GaN HEMT die also deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than Si and GaAs transistors.
As such, the CGH80030D is ideal for use in a diverse range of applications, including: UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios, among others.
“The increasingly widespread adoption of GaN-on-SiC RF technology in applications including: military and aerospace systems, telecom base stations, wideband test equipment, civil radar, and medical applications is driving R&D efforts at Wolfspeed,” said Jim Milligan, RF and microwave director, Wolfspeed. “As such, the new 28V, 30W GaN HEMT die we launched at WAMICON enables enhanced innovation, performance, and efficiency across a broad spectrum of RF and microwave applications in both the commercial and military sectors.”
Wolfspeed
www.wolfspeed.com/cgh80030d
Leave a Reply
You must be logged in to post a comment.