Microsemi Corporation (Nasdaq: MSCC) has announced a new high power monolithic microwave surface mount (MMSM) series-shunt SP2T PIN diode reflective switch, the MPS2R10-606. The device is optimized for high frequency (HF), very high frequency (VHF) and ultrahigh frequency (UHF) high power transmit/receive (T/R) switching in applications such as magnetic resonance imaging (MRI) receive arrays and first responder, military, aviation and marine radio communications. The new device leverages Microsemi’s unique 50-year history supplying premier PIN diode products for challenging radio frequency (RF) power, small signal switching and receiver power limiting functions.
Microsemi’s new MPS2R10-606 switch provides frequency coverage from 100 megahertz (MHz) to 1 gigahertz (GHz) with 0.2 decibel (dB) insertion loss, 15 dB return loss and 55 dB of isolation at mid-band. A simple analog control voltage allows the device to achieve 500 nanosecond (nS) switching speeds while handling up to 100 watts (W) of continuous wave (CW) power. Available in a compact, nonmagnetic 2.03 mm x 1.27 mm format, the MPS2R10-606 switch meets RoHS requirements per EU directive 2002/95/EC, and is fully compatible with pick and place and surface-mount technology (SMT) solder reflow manufacturing techniques.
In addition, the MPS2R10-606’s technology supports public safety, aviation, marine, and military handheld and rack mount radio hardware (JTRS), which are critical in combating multiple international and domestic threats. As Microsemi’s PIN diode MMSM switches are nonmagnetic, they offer the high density and performance required for the implementation of MRI receive arrays.
According to a recent survey by Strategy Analytics, the land-based military radio market alone will approach$6.5 billion in 2024. Microsemi’s MPS2R10-606 switch is ideal for this growing market, as it combines compact size, fast switching and high CW power handling capability.
Microsemi: Continued Leadership in PIN Diodes
Microsemi continues to develop premier PIN diode products and currently offers a comprehensive line of RF and microwave GaAs and silicon PIN diodes, which range from ultralow junction capacitance (Cj) beam lead PIN diodes capable of switching up to 40 GHz, to high power PIN diodes designed to handle 60 decibel-milliwatts (dBm) CW power. Designed for low intermodulation switching and attenuation, these PIN diode products cover a wide variety of applications including mobile and fixed communications systems, radar systems to Ka-band frequencies, wideband electronic warfare (EW) systems, test instrumentation, MRI systems, cellular base stations, software-defined radios (SDRs), T/R switch control and duplexers. Microsemi’s PIN diodes are available in die, flip chip, beam-lead, stripline, glass axial, plastic, ceramic, low magnetic, hermetic, wafer-scale and surface-mount options.
Key features of the MPS2R10-606 include:
- 100W CW power handling capability
- Low insertion loss: 0.2 dB
- High isolation: 55 dB
- Low return loss: 15 dB
- High switching speed: 500 nS
- Stable low leakage passivation with rugged glass body