Central Semiconductor introduces its newest energy efficient, high voltage UltraMOS MOSFET designed to minimize total conduction losses while maximizing power density. The CDM22012-800LRFP is a 12A, 800V MOSFET in the TO-220FP (Full Pack) package. The low rDS(ON) of 0.37Ω and low total gate charge of 7.6nC are key energy efficiency characteristics of this UltraMOS™ device, which surpass the operational performance of similarly rated standard MOSFETs.
The 800V UltraMOS™ MOSFETs are ideal for power supplies, power inverters and the perfect pairing with Central’s HyperFast rectifiers, to provide a superior high-speed operational benefit for phase shift compensation in Power Factor Correction (PFC) applications. UltraMOS devices are available in industry standard packages as well as in custom packages.
Pricing for the CDM22012-800LRFP is $1.90 each for 1,000 pieces packed in sleeves or supplied bulk and available from Digi-Key (www.digikey.com) Future Electronics (www.futureelectronics.com) and Mouser Electronics (www.mouser.com). Sample devices are available upon request direct from Central Semiconductor (www.centralsemi.com). In addition to the 800V device, Central has 600V and 700 UltraMOS™ devices available. A 6A, 800V device is also planned for release later this year.
Central Semiconductor
www.centralsemi.com
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