Toshiba America Electronic Components, Inc. (TAEC)* has expanded its lineup of small, low on-resistance MOSFETs with the addition of the SSM6K513NU and SSM6K514NU. The new N-channel MOSFETs feature industry-leading low on-resistance, and are suited for use as load switches in mobile devices such as smartphones and tablets.
The 30V SSM6K513NU and 40V SSM6K514NU utilize Toshiba’s latest U-MOS IX-H series trench process, which is designed to deliver efficiency across a wide range of load conditions by driving down on-resistance (RDS(ON)) and improving switching efficiency by reducing output charge (QOSS) . The SSM6K513NU and SSM6K514NU achieve on-resistance of 6.5mOhm and 8.9mOhm, respectively, and reduce heat dissipation resulting from turn-on loss by approximately 40 percent when compared to existing products. 
The SSM6K513NU and SSM6K514NU can be used in electric power switching applications of over 10W, including small mobile devices that meet the USB Type-C™ and USB Power Delivery standards. Toshiba’s new MOSFETs contribute to high system efficiency and low power consumption in these space-conscious devices.
|Part Number||Absolute Maximum Ratings||RDS(ON) typ. (mOhm)||Ciss typ.