The wide bandgap semiconductor Gallium Nitride (GaN) has been out of the lab and into products in some markets for almost a decade. But this is a new and exciting time for GaN as it finds its way into rapidly expanding high-speed, high-power applications like data centers, motor drives, EVs, and more. A significant player in this “GaN Revolution” is global semiconductor company Transphorm, Inc.

Transphorm’s CTO and Founder Dr. Umesh Mishra co-founded his first company, Nitres Inc. in 1996. Later acquired by Cree, it was the first company to develop GaN LEDs and transistors. This IEEE David Sarnoff Award winner for “The Development of Gallium Nitride Electronics” is passionate about the economic prospects of GaN — and even more passionate about how the efficient power conversion enabled by GaN can lead to better living in a cleaner world.

 

Related presentations from APEC 2017:
Huang, Zan; Cuadra, Jason, Preventing GaN Device VHF Oscillation, APEC 2017 Industry Session, March, 2017
Zuk, Philip; Campeau, Gaetan, How to Design with GaN in Under an Hour, APEC 2017 Exhibitor Session, March 2017

 

Thanks to audio production engineer Daniel Villareal!