Powdec K.K. today announced that, together with Sheffield
University, they have succeeded in developing breakthrough high
voltage Gallium Nitride (GaN) power transistors. This was realized
by creating semiconductor hetero-junction structures based on novel
principles, which solve the problems of conventional transistors
and dramatically improve the transistor performance. In the
transistors, current collapse is almost completely eliminated,
power losses are reduced and high break-down voltages of more than
1,100 Volts (V) are realized. These new GaN transistors are suited
to be used in a broad range of equipment from inverters in consumer
appliances to server power supplies, electric vehicles and
industrial motors to lower power use.
Powdec’s breakthrough HFET
structure.
Gallium Nitride is a next generation semiconductor that enables
power devices to have lower power losses and higher energy
efficiency compared to present silicon devices. Together with
Powdec’s previously announced GaN diodes, these GaN
transistors will be core devices enabling an energy efficient,
green future.