This strategic partnership leverages GaN Systems’ industry leading capabilities in power GaN transistors along with ROHM’s comprehensive footprint in semiconductor and considerable resources in the design and manufacture of electronic components. The companies have agreed to jointly develop form-, fit-, and function-compatible products using GaN semiconductor dies in both GaN Systems’ GaNPX® packaging and ROHM’s traditional power semiconductor packaging. GaN Systems and ROHM customers will now have the advantage of having two possible sources for package-compatible GaN power switches, presenting the widest selection of dual-sourced GaN devices.
Customers will also benefit from greater access to GaN products and resources globally, especially in Asia, one of the fastest growing market for GaN. In addition, GaN Systems and ROHM will work together on GaN semiconductor research and development activities to propose ground-breaking solutions for the industrial, automotive, and consumer electronics fields. And to contribute to greater energy savings and increased power densities in the power electronics market, both companies will continue to collaborate to expand their line-up of GaN products and broaden the range of choices.