A new solution service called Super Industrial features devices designed to meet the harshest environmental concerns experienced by designers of endproducts used in adverse conditions. Whether products are used in moisture-sensitive environments or extreme temperatures, Super Industrial™ discrete semiconductors will overcome these challenges. Utilizing Central Semiconductor’s unique custom device development process, Super Industrial discretes start […]
1200V rectifiers address critical design parameters of high-frequency systems
Central Semiconductor introduces the CSICD05-1200 (5A, 1200V) and CSICD10-1200 (10A, 1200V) Silicon Carbide Schottky rectifiers, featuring the true 2-lead DPAK-2L (TO-252-2L) package. Both devices are ideal for high-frequency systems where energy efficiency, low switching losses, and thermal performance are critical design parameters. Silicon Carbide provides a stable solution for a wide range of temperatures and […]
600 volt UltraMOS MOSFETs exceed operational performances
Central Semiconductor introduces its new energy efficient, high-voltage UltraMOS MOSFETs designed to minimize total conduction losses while maximizing power density. The initial release of this new family consists of the CDM4-600LR (4A in a DPAK), CDM7-600LR (7A in a DPAK) and CDM22011-600LRFP (11A in a TO-220FP). The key energy efficiency characteristics of UltraMOSTM devices include […]
Central’s UltraMOS MOSFETs expands to 800 volts
Central Semiconductor introduces its newest energy efficient, high-voltage UltraMOS MOSFET designed to minimize total conduction losses while maximizing power density. The CDM22012-800LRFP is a 12 A, 800 V MOSFET in the TO-220 Full Pack package. The low rDS(ON) of 0.37Ω and low total gate charge of 7.6 nC are key energy efficiency characteristics of this […]
