Efficient Power Conversion Corporation advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET. This device joins the EPC2045 (7 mΩ, 100 V), EPC2052 (13.5 mΩ, 100 V) and EPC2051 (25 mΩ, 100 V) to offer designers a comprehensive family […]
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100-V GaN power transistors target uses in 48-V dc-dc converters
The EPC2052 is a 100-V GaN transistor with a maximum RDS(on) of 13.5 mΩ and a 74-A pulsed output current for high-efficiency power conversion in a tiny 2.25-mm2 footprint. Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2052 measures just 1.50×1.50 mm (2.25 mm2). Despite the […]
eGaN power transistor hits 97% efficiency at 500 kHz
The EPC2051 is a 100-V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37-A pulsed output current for high efficiency power conversion in a tiny 1.1-mm2 footprint. Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2051 measures just 1.30×0.85 mm (1.1 mm2). Despite the small footprint, […]
GaN FET supplier EPC appoints Spirit Electronics as Defense/Aerospace Distributor
To support its accelerating growth in the defense and aerospace markets, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Spirit Electronics as a distribution partner focusing on these key market segments. Spirit Electronics, in operation since 1979 and located in Phoenix, Arizona and Irvine, California, supplies products and services to the […]
eGaN power transistors get AEC-Q101 qualification for use in harsh environments
EPC announces successful AEC-Q101 qualification of two eGaN devices, opening a range of applications in automotive and other harsh environments. The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the […]
GaN transistor handles 26-A pulsed output current thanks to RDS(on) of 65 mΩ
Efficient Power Conversion (EPC) announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or […]
Video: How Gallium Nitride semiconductors will make your home and workspace completely wireless
Wireless power is ready to take its next big step forward. Imagine sitting at work with your monitors, phone, and computer at your desk while not having to worry about a single power cable. That’s the future thanks to semiconductors. Gallium Nitride power semiconductors could make it possible to transmit power wirelessly to […]
GaN-based 48 V to 12 V regulated power supply development board delivers over 1.25 kW/in3, over 96% efficiency
Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board. This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over […]
GaN power modules deliver over 1.4 kW/in3 for 48 – 12 V DC-DC and up to 10 MHz for PoL power conversion
Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based […]
ICs combine gate drivers with eGaN FETs for better efficiency, more compact packaging
Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of […]
