EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204100 V eGaN FETs. The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and […]
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25 mΩ, 200V eGaN FET meets size and performance demands
EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current. The chip-scale packaging of the EPC2046 handles […]
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How we devised a wirelessly powered television set
eGaN FET technology is playing a role in making wireless power practical for a variety of home appliances. Michael A. de Rooij, Yuanzhe Zhang, Efficient Power Conversion Corp. Televisions can get their content wirelessly, but there is one set of wires they still need: those in their power cord. The consumer electronics industry has floated […]
