EPC announces its Phase Eleven Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. This strategy relied upon tests forcing devices to fail under a variety of conditions to create stronger products to serve demanding applications such as lidar for autonomous vehicles, LTE base stations, vehicle headlamps, and satellites to name […]
eGaN FET gets automotive AEC Q101 qualification
EPC announces successful AEC Q101 qualification of the 80 V EPC2214 designed for lidar systems in the automotive industry and other harsh environments. eGaN technology has been in mass production for over nine years, accumulating billions of hours of successful field experience in automotive applications, such as lidar (Light Detection and Ranging) and radar for […]
How eGaN transistor technology improves Lidar performance
Alex Lidow from EPC recently filmed a video with us covering Lidar, a hot subject right now for autonomous vehicles. One of the biggest applications for eGaN is driving these lasers. The reason is that automakers want to see a long distance with a high degree of accuracy. To do that, the laser in a […]
Graphics-intensive apps get more juice from GaN dc/dc converters
Alex Lidow from EPC recently did a short video with us covering a brand new GaN-based DC-DC converter that’s super small and efficient. Lidow says EPC has been working to improve GaN-based dc/dc conversion for about eight years. They had to overcome a lot of barriers to do so because when they first started, there […]
eGaN power transistors get AEC-Q101 qualification for use in harsh environments
EPC announces successful AEC-Q101 qualification of two eGaN devices, opening a range of applications in automotive and other harsh environments. The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the […]
GaN transistor handles 26-A pulsed output current thanks to RDS(on) of 65 mΩ
Efficient Power Conversion (EPC) announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or […]
Video: How Gallium Nitride semiconductors will make your home and workspace completely wireless
Wireless power is ready to take its next big step forward. Imagine sitting at work with your monitors, phone, and computer at your desk while not having to worry about a single power cable. That’s the future thanks to semiconductors. Gallium Nitride power semiconductors could make it possible to transmit power wirelessly to […]
GaN-based 48 V to 12 V regulated power supply development board delivers over 1.25 kW/in3, over 96% efficiency
Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board. This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over […]
GaN power modules deliver over 1.4 kW/in3 for 48 – 12 V DC-DC and up to 10 MHz for PoL power conversion
Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based […]
ICs combine gate drivers with eGaN FETs for better efficiency, more compact packaging
Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of […]
