Fujitsu and Fujitsu Laboratories have succeeded in developing a transistor that can provide both high current and high voltage in gallium-nitride (GaN) high electron mobility transistors (HEMT), effectively tripling the output power of transistors used for transmitters in the microwave band. Fujitsu’s crystal structure improves operating voltage by dispersing the applied voltage to the transistor, and […]
Socionext Inc. and Fujitsu Laboratories Ltd. today announced that they have developed the world’s lowest power-consuming transceiver circuit that achieves communications speeds of 56 Gbps per channel. Compared…
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