Hitachi Ltd. says it has developed a new kind of silicon-carbide-based MOSFET that has dramatically lower on resistance than comparable devices. The new MOSFET uses what Hitachi calls a TED-MOS structure, for Trench-etched DMOS-FET. Compared to conventional DMOS-FET (Double-diffused MOSFET) devices, the new structure is said to reduce electric field strength, an index of durability […]
By Ed Cady, contributing editor It is amazing that after five decades of copper twin-axial raw cable developments, shipments and diverse applications, there are several newly released raw…
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