Infineon Technologies AG expands its 1200 V discrete IGBT product portfolio by offering up to 75 A. The devices are co-packed with a full rated diode in a TO-247PLUS package. The new TO-247PLUS 3pin and 4pin packages serve the growing demand for higher power density and highest efficiency in discrete packages. Typical applications with a […]
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Half-bridge modules carry 1.2-kV SiC MOSFETs
Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on silicon carbide (SiC). Infineon Technologies AG is starting volume production for the EASY 1B, the first full-SiC module announced during PCIM 2016. On the occasion of this year’s PCIM in Nuremberg, the company is showcasing […]
40-V MOSFET targets battery powered tool, small EV apps
Infineon Technologies AG complements its StrongIRFET™ family with a 40 V MOSFET packaged in D²PAK 7pin+. The new MOSFET family offers an extremely low R DS(on) of 0.65 mΩ and the highest current carrying capability in the industry. This increases both robustness and reliability for high power density applications which require high efficiency and reliability. The surface […]
700-V MOSFETs target quasi resonant flyback topologies
Infineon Technologies AG developed the new 700 V CoolMOS™ P7 family to serve today’s and tomorrow’s trends in quasi-resonant flyback topologies. These new MOSFETs offer unmatched performance improvements compared to currently used superjunction technologies. Soft switching topologies like smart phone and tablet chargers but also notebook adapters profit from this advantage. Additionally, the new CoolMOS supports fast […]