Innoscience Technology will present two papers at the prestigious IEEE International Symposium on Power Semiconductor Devices (ISPSD) conference in Vancouver, Canada, May 22-25. The first paper systematically evaluates the reliability and switching lifetime of a 650-V commercial GaN-on-Si HEMT fabricated on a 200mm (8-inch) CMOS-compatible process platform for a high-density PFC Boost power converter application. Innoscience’s […]
innoscience
8-inch GaN-on-Si device maker signs with WPG
Innoscience Technology has signed a global distribution agreement with WPG Holdings (WPG), giving customers in all parts of the world access to Innoscience’s leading high and low voltage normally-off (enhancement mode) GaN HEMTs. Dr Denis Marcon, General Manager, Innoscience Europe comments: “Our aim is to ensure that every power electronics designer – no matter where they […]
140-W supply design employs high- and low-voltage GaN switches to boost efficiency
Innoscience Technology announced a new ultra-high-density 140W power supply demo that uses the company’s high- and low-voltage GaN HEMT devices to achieve efficiencies of over 95% (230VAC; 5V/28A). Measuring just 60x60x22mm (2.4×2.4×0.9in) the PSU has a class-leading power density of 1.76W/cm3 (29W/in3). The 140W 300kHz AC/DC adapter uses a CRM Totem Pole PFC + AHB […]
Dedicated 8-inch, GaN-on-Si FET producer opens locations in US and Europe
Innoscience Technology who focuses on creating a global energy ecosystem based on high-performance, low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions, today announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is now poised to support customers through the addition of design and sales support facilities in Santa Clara, […]
