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peregrinesemiconductor

Fully integrated 8-channel LED boost PSiP uses switched capacitor architecture

March 9, 2018 By Aimee Kalnoskas Leave a Comment

pSemiTM Corporation (formerly Peregrine Semiconductor), a Murata company focused on semiconductor integration, introduces the PE23300, the industry’s only fully integrated LED boost power supply in package (PSiP) based on a charge-pump, switched-capacitor architecture that offloads most of the power-conversion work from the inductor to capacitors in the charge pump. Powering up to eight LED strings at […]

Filed Under: Power Electronic Tips Tagged With: peregrinesemiconductor, pSemi

High-speed GaN FET driver switches at 40 MHz

October 18, 2017 By Aimee Kalnoskas Leave a Comment

Audio systems are challenged to both minimize size and deliver exceptional audio quality to listeners. At the system-design level, better audio performance and sound quality occur when distortion is reduced. MOSFET components have parasitic diodes and gate capacitance that creates jitter and distortion in class-D audio systems, whereas GaN FETs have much smaller gate capacitance […]

Filed Under: Power Electronic Tips Tagged With: EPC, gansystems, peregrinesemiconductor

MIT spin-off Arctic Sand becomes POWERful feather in the cap of Peregrine Semiconductor

March 21, 2017 By Aimee Kalnoskas Leave a Comment

Peregrine Semiconductor Corp., a Murata company and the founder of RF SOI (silicon on insulator), today announces the acquisition of Arctic Sand Technologies. An MIT spin-off, Arctic Sand designs and manufactures low-power semiconductors for use in DC-DC power conversion applications. This strategic acquisition will accelerate Murata’s vision to revolutionize power electronics with the world’s smallest, […]

Filed Under: Industry News Tagged With: arcticsand, murata, peregrinesemiconductor

High-throw count RF switches span 9 kHz – 8 GHz range

March 8, 2017 By Aimee Kalnoskas

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the UltraCMOS® PE42562, PE42582 and PE42512 high-throw count RF switches. Optimized for the demands of next-generation test & measurement equipment, these SP6T, SP8T and SP12T absorptive switches support a wide frequency range from 9 kHz to 8 GHz […]

The post High-throw count RF switches span 9 kHz – 8 GHz range appeared first on Analog IC Tips.

Filed Under: Analog IC Tips, Analog ICs, Applications, Telecommunications, Wireless Tagged With: peregrinesemiconductor

RF SOI switches operate up to 60 GHz

October 6, 2016 By Aimee Kalnoskas

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS PE42525 and PE426525, the industry’s first RF SOI switches…

The post RF SOI switches operate up to 60 GHz appeared first on Analog IC Tips.

Filed Under: Analog IC Tips, Analog ICs, Applications, Industrial, Telecommunications, Wireless Tagged With: peregrine, peregrinesemiconductor

GaN FET driver operates up to 33 MHz and handles voltages up to 80V

July 13, 2016 By Aimee Kalnoskas

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the word’s fastest gallium nitride (GaN) field-effect transistor (FET) driver, the…

Power Electronic Tips

Filed Under: Power Electronic Tips Tagged With: peregrinesemiconductor

CMOS RF switch boasts cable-compatible linearity

March 18, 2016 By Abby Esposito

Peregrine Semiconductor Corp. has announced the UltraCMOS PE42723, an RF switch that boasts the highest linearity specifications on the market today. An upgraded version of the successful PE42722,…

The post CMOS RF switch boasts cable-compatible linearity appeared first on Analog IC Tips.

Filed Under: Analog IC Tips, Applications, Consumer Tagged With: peregrinesemiconductor

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