Reality: When switching from reverse conduction to off-state, the reverse recovery charge accounts for not only bipolar transport minority carriers recombination but also the formation of the space-charge region, which is effectively equivalent to the output charge (Qoss). It’s true that GaN HEMTs have no reverse conduction bipolar transport, but they nevertheless do have output […]
Transphorm Inc.
MYTH #3: Cascode GaN oscillates
Reality: Cascode GaN has a lot of gains. And gain is a wonderful thing, leading to very fast switching. It needs, however, to be harnessed properly to achieve the desired performance while preventing undesired effects, such as oscillations. To prevent oscillations and to get the most out of any fast-switching semiconductor device, circuit engineers should […]
MYTH #1: Si MOSFETs add on-state resistance and reverse recovery charge
Reality: In cascode GaN technology, the GaN chip bears most of the off-state high voltage (> 90%). The Si MOSFET needs only to bear a few 10s of volts. And, as the specific on-state resistance per unit area decreases quadratically with rated voltage, the Si MOSFET achieves incredibly low RDS(on), less than 10% of the […]
The fundamental advantages of D-Mode GaN in cascode configuration
A Brief Tutorial on the inherent benefits of normally off D-Mode versus E-Mode GaN Inarguably, GaN power semiconductors are a hot topic in power electronics. Two transistor variations prevail today: cascode GaN and e-mode GaN. When confronted with the choice, the debate at times inexplicably leans toward e-mode. In reality, cascode GaN proves to be […]
Integrated GaN system-in-package to showcase at APEC
Transphorm, Inc. and Weltrend Semiconductor Inc. announced the release of their first GaN System-in-Package (SiP). The WT7162RHUG24A is an integrated circuit designed for use in 45 to 100-watt USB-C PD power adapters charging smartphones, tablets, laptops, and other smart devices. It offers peak power efficiency of greater than 93%. Device samples will be available in […]
