UnitedSiC announced it has released a range of SiC JFET die suitable for co-packaging with a controller IC with built-in low voltage MOSFET to fabricate an extremely fast, cascode-based, 20-100 W Flyback product. Ranging from 650 V to 1700 V, these normally-on SiC JFETs enable simplified start-up implementation with zero standby dissipation and are ideal […]
SiC FETs come in TO-247-4L 4-pin Kelvin Sense packages
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs in a TO-247-4L 4-pin Kelvin Sense package option. Based on an efficient cascode configuration, this new series provides designers with very fast switching, high-power […]
650V and 1200 V standard gate drive SiC FETs offer drop-in functionality
UnitedSiC announced the launch of its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series. Based on UnitedSiC’sproprietary cascode configuration, this new series provides higher switching speeds while at the […]
SiC JFETs expanded to include 1200 V and 650 V options
UnitedSiC announces its Generation 3 1200 V and 650 V silicon carbide JFETs, expanding its existing unique portfolio of standalone normally-ON SiC JFETs. The devices are normally-ON with zero voltage gate drive, making them particularly suited for applications such as very fast action, solid-state circuit breakers and circuit protection generally where a default to an […]
1200 V, 80 and 40 mΩ JFETS provide upgrade path for IGBT, Si, and SiC-MOSFET users
Designers of Power Factor Correction stages (PFCs), Active Frontend Rectifiers, LLC converters and Phase Shift Full Bridge converters can now upgrade existing system performance by using the new UJ3C1200 series of SiC JFET cascodes from UnitedSiC. With a voltage rating of 1200 V and ON-resistances of 80 and 40 milliohms, these devices offer a ‘drop-in’ […]
650-V SiC FETs are drop-in replacements for Si superjunction MOSFETs
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has announced the UJ3C series of 650 V SiC FETs as drop-in replacements for silicon Superjunction MOSFETs. Available in standard TO-220, TO-247 and D2PAK-3L packages, they operate with standard Si-MOSFET gate drive, eliminating the need to re-design drive circuits, while offering low RDS(ON) and low gate […]
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