• Skip to primary navigation
  • Skip to main content
  • Skip to primary sidebar
  • Skip to footer

Electrical Engineering News and Products

Electronics Engineering Resources, Articles, Forums, Tear Down Videos and Technical Electronics How-To's

  • Products / Components
    • Analog ICs
    • Battery Power
    • Connectors
    • Microcontrollers
    • Power Electronics
    • Sensors
    • Test and Measurement
    • Wire / Cable
  • Applications
    • 5G
    • Automotive/Transportation
    • EV Engineering
    • Industrial
    • IoT
    • Medical
    • Telecommunications
    • Wearables
    • Wireless
  • Learn
    • eBooks / Handbooks
    • EE Training Days
    • Tutorials
    • Learning Center
    • Tech Toolboxes
    • Webinars & Digital Events
  • Resources
    • White Papers
    • Educational Assets
    • Design Guide Library
    • Digital Issues
    • Engineering Diversity & Inclusion
    • LEAP Awards
    • Podcasts
    • DesignFast
  • Videos
    • EE Videos and Interviews
    • Teardown Videos
  • EE Forums
    • EDABoard.com
    • Electro-Tech-Online.com
  • Bill’s Blogs
  • Advertise
  • Subscribe

unitedsic

New 6-mohm SiC FET handles 750 V

September 14, 2021 By Redding Traiger

UnitedSiC has responded to the power designer’s requests for higher-performance, higher-efficient SiC FETs with the announcement of the industry’s best 750V, 6mohm device. At an RDS(on) value of less than half the nearest SiC MOSFET competitor, the new 6mohm device also provides a robust short-circuit withstand time rating of 5s. Today’s announcement includes 9 new […]

Filed Under: Applications, Automotive/Transportation, Power Electronic Tips, Renewable energy, Transistor Tagged With: unitedsic

SiC power FETs boast super-low 6-mΩ RDS(on)

September 14, 2021 By Lee Teschler

At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]

Filed Under: Applications, Power Electronic Tips, Renewable energy, Telecommunications, Transistor Tagged With: unitedsic

Free online tool streamlines SiC FET, Schottky diode selection process

August 10, 2021 By Redding Traiger

UnitedSiC has launched an upgrade to its FET-Jet CalculatorTM. This new version (v2) significantly streamlines the SiC FET and Schottky diode selection process and simplifies the analysis of all power-related results. First launched in March, this simple, registration-free online tool facilitates the designer’s selection and performance comparison process, in different power applications and 26 unique […]

Filed Under: Power Electronic Tips Tagged With: unitedsic

The advantages of Generation-Four SiC FETs

February 5, 2021 By Lee Teschler

New silicon-carbide FETs perform better than previous versions and can replace silicon MOSFETs with relative ease. Anup Bhalla, VP Engineering UnitedSiC Wide-bandgap (WBG) semiconductors are now accepted as the future of high-efficiency power conversion. The reason: they provide lower conduction and switching losses than otherwise-comparable silicon-based IGBTs or MOSFETs. Since the introduction of WBG silicon […]

Filed Under: EV Engineering, FAQ, Featured, Power Electronic Tips Tagged With: FAQ, unitedsic

750-V SiC FETs feature reduced on-resistance, low intrinsic capacitance

December 1, 2020 By Lee Teschler

Devices based on an advanced Gen 4 SiC FET technology platform are the first and only 750-V SiC FETs currently available on the market. These Gen 4 devices enable new performance levels, based on leadership Figures of Merit (FoM), that benefit power applications across automotive, industrial charging, telecom rectifiers, datacenter PFC, and dc-dc conversion as […]

Filed Under: Applications, Automotive/Transportation, Industrial, Power Electronic Tips, Telecommunications Tagged With: unitedsic

FETs in DFN 8×8 format boast low RDS(on) of 34mΩ and 45mΩ

February 6, 2020 By Aimee Kalnoskas

UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; the industry’s lowest RDS(on) SiC FETs available in the popular low-profile DFN 8×8 surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach. Applications are expected to […]

Filed Under: Power Electronic Tips Tagged With: unitedsic

Low RDS(on) SiC FETs come in low-profile DFN 8×8 SM package

February 3, 2020 By Aimee Kalnoskas

UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; the industry’s lowest RDS(on) SiC FETs available in the popular low-profile DFN 8×8 surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach. Applications are expected to […]

Filed Under: Power Electronic Tips Tagged With: unitedsic

Hard-switching 650-V SiC FETs come in TO220-3L packages

July 25, 2019 By Aimee Kalnoskas Leave a Comment

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has added two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs. The new products offer RDS(on) values of 30mohms (UF3C065030T3S) and 80mohms (UF3C065080T3S). The three-leaded, industry-standard TO220-3L package features enhanced thermal characteristics made possible by a sintered-silver packaging […]

Filed Under: Power Electronic Tips Tagged With: unitedsic

SiC 1.2-kV FET comes in TO-247-4L 4-leaded Kelvin Sense discrete package

June 20, 2019 By Aimee Kalnoskas Leave a Comment

UnitedSiC has further expanded its UF3C FAST series product offering by introducing an additional 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option. The UF3C120150K4S offers a typical on-resistance (RDS(on)) of 150 mΩ, bringing the total number of 4-leaded FAST Series devices up to six and extending the on-resistance range of […]

Filed Under: Power Electronic Tips Tagged With: unitedsic

New SiC FETs added to 650 V product portfolio

May 7, 2019 By Aimee Kalnoskas Leave a Comment

UnitedSiC has added seven new TO220-3L and D2PAK-3L device/package combinations to its UJ3C (general purpose) and UF3C (hard switched) series of 650V SiC FETs. These new devices provide new levels of high-voltage power performance in the fast-growing data center server, 5G base station, and electric vehicle markets, where they will be used in power supplies, […]

Filed Under: Power Electronic Tips Tagged With: unitedsic

  • Page 1
  • Page 2
  • Go to Next Page »

Primary Sidebar

EE Engineering Training Days

engineering

Featured Contributions

Why outdoor charging demands specialized battery connectors

How Li-ion batteries are powering the shift in off-highway equipment

Integrating MEMS technology into next-gen vehicle safety features

Five challenges for developing next-generation ADAS and autonomous vehicles

Robust design for Variable Frequency Drives and starters

More Featured Contributions

EE Tech Toolbox

“ee
Tech Toolbox: 5G Technology
This Tech Toolbox covers the basics of 5G technology plus a story about how engineers designed and built a prototype DSL router mostly from old cellphone parts. Download this first 5G/wired/wireless communications Tech Toolbox to learn more!

EE Learning Center

EE Learning Center
“ee
EXPAND YOUR KNOWLEDGE AND STAY CONNECTED
Get the latest info on technologies, tools and strategies for EE professionals.
“bills
contribute

R&D World Podcasts

R&D 100 Episode 10
See More >

Sponsored Content

Designing for Serviceability: The Role of Interconnects in HVAC Maintenance

From Control Boards to Comfort: How Signal Integrity Drives HVAC Innovation

Built to Withstand: Sealing and Thermal Protection in HVAC Sub-Systems

Revolutionizing Manufacturing with Smart Factories

Smarter HVAC Starts at the Sub-System Level

Empowering aerospace E/E design and innovation through Siemens Xcelerator and Capital in the Cloud

More Sponsored Content >>

RSS Current EDABoard.com discussions

  • LLC converter shoot through currents at start-up
  • Step Up Push Pull Transformer design / construction
  • How to create custom diode and add its netlist into Ansys circuit designer schematic?
  • Two sections broadband impedance matching
  • connector model question

RSS Current Electro-Tech-Online.com Discussions

  • Impact of Tariffs on PCB Fab
  • Wierd makita battery
  • More fun with ws2812 this time XC8 and CLC
  • I Wanna build a robot
  • Earbud wiring w/ mic
Search Millions of Parts from Thousands of Suppliers.

Search Now!
design fast globle

Footer

EE World Online

EE WORLD ONLINE NETWORK

  • 5G Technology World
  • Analog IC Tips
  • Battery Power Tips
  • Connector Tips
  • DesignFast
  • EDABoard Forums
  • Electro-Tech-Online Forums
  • Engineer's Garage
  • EV Engineering
  • Microcontroller Tips
  • Power Electronic Tips
  • Sensor Tips
  • Test and Measurement Tips

EE WORLD ONLINE

  • Subscribe to our newsletter
  • Teardown Videos
  • Advertise with us
  • Contact us
  • About Us

Copyright © 2025 · WTWH Media LLC and its licensors. All rights reserved.
The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media.

Privacy Policy