New silicon-carbide FETs perform better than previous versions and can replace silicon MOSFETs with relative ease. Anup Bhalla, VP Engineering UnitedSiC Wide-bandgap (WBG) semiconductors are now accepted as the future of high-efficiency power conversion. The reason: they provide lower conduction and switching losses than otherwise-comparable silicon-based IGBTs or MOSFETs. Since the introduction of WBG silicon […]
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750-V SiC FETs feature reduced on-resistance, low intrinsic capacitance
Devices based on an advanced Gen 4 SiC FET technology platform are the first and only 750-V SiC FETs currently available on the market. These Gen 4 devices enable new performance levels, based on leadership Figures of Merit (FoM), that benefit power applications across automotive, industrial charging, telecom rectifiers, datacenter PFC, and dc-dc conversion as […]
FETs in DFN 8×8 format boast low RDS(on) of 34mΩ and 45mΩ
UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; the industry’s lowest RDS(on) SiC FETs available in the popular low-profile DFN 8×8 surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach. Applications are expected to […]
Low RDS(on) SiC FETs come in low-profile DFN 8×8 SM package
UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; the industry’s lowest RDS(on) SiC FETs available in the popular low-profile DFN 8×8 surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach. Applications are expected to […]
Hard-switching 650-V SiC FETs come in TO220-3L packages
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has added two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs. The new products offer RDS(on) values of 30mohms (UF3C065030T3S) and 80mohms (UF3C065080T3S). The three-leaded, industry-standard TO220-3L package features enhanced thermal characteristics made possible by a sintered-silver packaging […]
SiC 1.2-kV FET comes in TO-247-4L 4-leaded Kelvin Sense discrete package
UnitedSiC has further expanded its UF3C FAST series product offering by introducing an additional 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option. The UF3C120150K4S offers a typical on-resistance (RDS(on)) of 150 mΩ, bringing the total number of 4-leaded FAST Series devices up to six and extending the on-resistance range of […]
New SiC FETs added to 650 V product portfolio
UnitedSiC has added seven new TO220-3L and D2PAK-3L device/package combinations to its UJ3C (general purpose) and UF3C (hard switched) series of 650V SiC FETs. These new devices provide new levels of high-voltage power performance in the fast-growing data center server, 5G base station, and electric vehicle markets, where they will be used in power supplies, […]
SiC JFET family optimized for low power AC-DC flyback converters
UnitedSiC announced it has released a range of SiC JFET die suitable for co-packaging with a controller IC with built-in low voltage MOSFET to fabricate an extremely fast, cascode-based, 20-100 W Flyback product. Ranging from 650 V to 1700 V, these normally-on SiC JFETs enable simplified start-up implementation with zero standby dissipation and are ideal […]
SiC FETs come in TO-247-4L 4-pin Kelvin Sense packages
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs in a TO-247-4L 4-pin Kelvin Sense package option. Based on an efficient cascode configuration, this new series provides designers with very fast switching, high-power […]
650V and 1200 V standard gate drive SiC FETs offer drop-in functionality
UnitedSiC announced the launch of its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series. Based on UnitedSiC’sproprietary cascode configuration, this new series provides higher switching speeds while at the […]
