UnitedSiC announced the launch of its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series. Based on UnitedSiC’sproprietary cascode configuration,  this new series provides higher switching speeds while at the […]

UnitedSiC announces its Generation 3 1200 V and 650 V silicon carbide JFETs, expanding its existing unique portfolio of standalone normally-ON SiC JFETs.  The devices are normally-ON with zero voltage gate drive, making them particularly suited for applications such as very fast action, solid-state circuit breakers and circuit protection generally where a default to an […]

Designers of Power Factor Correction stages (PFCs), Active Frontend Rectifiers, LLC converters and Phase Shift Full Bridge converters can now upgrade existing system performance by using the new UJ3C1200 series of SiC JFET cascodes from UnitedSiC. With a voltage rating of 1200 V and ON-resistances of 80 and 40 milliohms, these devices offer a ‘drop-in’ […]

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has announced the UJ3C series of 650 V SiC FETs as drop-in replacements for silicon Superjunction MOSFETs. Available in standard TO-220, TO-247 and D2PAK-3L packages, they operate with standard Si-MOSFET gate drive, eliminating the need to re-design drive circuits, while offering low RDS(ON) and low gate […]