SiC FETs now include measures aimed at keeping losses down while managing fast switching waveforms. Dr. Anup Bhalla | UnitedSiC Silicon carbide (SiC) FETs have low on-resistances, fast switching speeds, and intrinsic diodes with low reverse recovery charge (QRR) and low forward-drop (VF) qualities. These qualities make SiC FETs suitable for use in active-front-end three-phase […]
Where SiC outperforms GaN
Silicon carbide and gallium nitride transistors both have their niche, but it pays to understand the applications in which each excels. Zhongda Li, United Silicon Carbide Inc. Wide band-gap (WBG) devices such as silicon carbide (SiC) and gallium nitride (GaN) are the hot topics of the moment, promising anything from universal wireless charging to power […]
Richardson Electronics to distribute United Silicon Carbide parts
Richardson Electronics, Ltd. has inked a new distribution agreement with United Silicon Carbide, inc., a leading manufacturer for SiC devices located in Monmouth Junction, N.J. This global agreement supports the expansion of USCi’s products to new customers. United Silicon Carbide, inc. is a semiconductor company specializing in the development of high efficiency Silicon Carbide (SiC) […]
