An isolated gate driver reference design operates with Wolfspeed’s Silicon Carbide (SiC) Field Effect Transistor (FET) power modules. The new Si828x gate driver board (GDB) kit from Skyworks simplifies design and enables increased integration for automotive applications by replacing competing designs with more complex gate driver board layouts. Designed and tested for Wolfspeed XM3 SiC […]
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Next-gen SiC diode targets renewable energy, EVs
Wolfspeed, A Cree Company, has introduced the 5th generation (C5D) 1700V SiC Schottky diode, which is optimized for renewable energy, industrial power and electric vehicle charging applications including solar power and wind turbine inverters, off-board chargers and uninterruptible power supply (UPS). The 1700V C5D is commercially available in both bare die and package formats, providing designers […]
SiC MOSFETs, diodes are automotive AEC-Q101 qualified, PPAP capable
Wolfspeed, announces E-Series, a new family of robust SiC semiconductor devices for the Electric Vehicle (EV) and renewable energy markets that delivers the highest available power density and durability for on-board automotive power conversion systems, off-board charging, solar inverters and other outdoor applications. Wolfspeed’s E-Series family is the first commercial family of SiC MOSFETs and diodes to […]
The benefits of silicon carbide in dc/dc converters
Adil Salman from Wolfspeed recently shot a video with us covering a silicon-carbide charging circuit demonstration. The charger used Wolfspeed SiC MOSFETs. It had two stages. One is a PFC (power factor correction) stage, the other is an LLC converter stage. If you were to try building a similar charger with silicon IGBTs, you would […]
New 1.2-kV SiC Schottky diodes feature more creepage and clearance
Wolfspeed, a Cree Company, has expanded its C4D family of 1200V SiC Schottky diodes to introduce three new products in a TO-247-2 type package. The increased spacing between the two leads provides more than twice the creepage and clearance distance compared to standard TO-247-3 and TO-220-2 packages. “Improved creepage distance makes the C4D family expansion […]
28-V GaN HEMTs operate to 8 GHz with high efficiency, gain
Wolfspeed, A Cree Company has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless […]
GaN HEMT RF power devices handle 250 W, work up to 3 GHz
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, has extended its family of 50V unmatched GaN HEMT RF power devices by adding a 250W part with a frequency range up to 3.0GHz and the highest efficiency of any comparably-rated […]
DOE awards $30 million to advance new class of high-performance power converters
The U.S. Department of Energy’s (DOE) Advanced Research Projects Agency-Energy (ARPA-E) today announced $30 million in funding for 21 innovative projects as part of the Creating Innovative and Reliable Circuits Using Inventive Topologies and Semiconductors (CIRCUITS) program. CIRCUITS project teams will accelerate the development and deployment of innovative electric power converters that save energy and give the United States a critical […]
SiC MOSFET reference design details totem-pole PFC topology hitting 98% efficiency
Wolfspeed, a Cree Company, has advanced the development of high efficiency data center power supplies through the implementation of an innovative totem-pole PFC topology that employs its latest low-inductance SiC MOSFETs to exceed an 80+ Titanium rating, which is critical for reducing the overall power consumption for data centers, estimated to be more than 70 […]
50-V GaN MMICs handle D-Day radar apps
Wolfspeed, A Cree Company has introduced two new GaN MMICs, the first 50V GaN devices specifically designed for S-band radar (2.7–3.5GHz) applications. These new 50V GaN MMICs enable radar systems designers to reduce time to market with a less costly, less complex, 50V power amplifier line-up, while delivering the most efficiency possible. With a best-in-class combination […]
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