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1200 V SiC devices cut power losses

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SemiQ has announced the availability of its QSiC™ Gen4 silicon carbide power devices, including 1200 V and 750 V MOSFETs and bare dies. The lineup is intended for EV charging infrastructure, DC/DC and DC/AC converters, solar inverters, SMPS, UPS, induction heating, welding and motor drives, and it includes a 4-pin TO-247-4L package option and bare die versions. The devices are also designed to support lower conduction losses and higher power density in high-voltage systems.

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