Infineon Technologies AG announced the OptiMOS™ 7 40 V switching-optimized power MOSFET portfolio for AI servers, data centers and telecom infrastructure. The devices are aimed at high-frequency DC-DC conversion in 48 V power architectures and emerging 800 V DC systems, with source-down and dual-side cooling package options, 5 V gate-drive support and junction temperatures up to 175 °C.