Micron Technology, Inc. demonstrated a 512GB DDR5 RDIMM with speeds up to 9,200 MT/s for AI, analytics, in-memory database and simulation workloads. The module uses vertically stacked DRAM dies connected through TSVs and can enable up to 12TB of DDR5 memory in a 24-slot dual-socket server. Compared with four 128GB RDIMMs, it is specified to reduce operating power by more than 60% while improving capacity for memory-intensive applications.