Renesas Electronics Corporation has introduced four 100 V enhancement-mode GaN power transistors, including the RTP100E005G1FL and RTP100E2P6G1FL, for AI data centers, robotics, factory automation, motor drives, power tools and solar microinverters. The devices offer zero reverse recovery, switching-loss reductions of up to 70% and RDS(on) values from 1.2 to 5 mΩ in MOSFET-compatible FCLGA and FCLGA-DSC packages. The low-voltage GaN FETs are available with evaluation boards for applications requiring higher switching frequencies, reduced passive component size and improved thermal management.