Ampleon announced the launch of the 600 Watt BLF0910H9LS600LDMOS power amplifier transistor. This is the first RF energy transistor using Ampleon’s latest Gen9HV 50 V LDMOS process, a node that has been optimized to deliver greatly increased efficiency, power and gain. It is designed for use in industrial heating continuous wave (CW) RF energy applications in the 900 to 930 MHz ISM band. Fabricated in a compact ceramic SOT502 package, the transistor combines a high output power with best in class operating efficiency within a small footprint. This reduces the space required, and thereby the cost of amplifier designs.
With a high operating efficiency, typically above 68 %, the need for cooling is also kept to a minimum, helping to further lower the space required.
The high gain of the BLF0910H9LS600, typically 19.8 dB, measured with a VDS of 50 V in a 915 MHz CW class AB application, helps to increase the overall amplifier efficiency.
By using two of these compact SOT502 packaged 600 Watt transistors, it is possible to architect a 1.2 kW RF power amplifier in the same space as a single SOT539 package. This architecture also contributes to a lower transistor temperature resulting in an effective higher efficiency than a single SOT539 solution.
The BLF0910H9LS600 has an integrated ESD protection and internal input matching. The matching increases the transistor input impedance and simplifies the design of the PCB matching structures to facilitate a compact amplifier design.
