MagnaChip Semiconductor Corp. announced that it will offer high density metal-insulator-metal capacitor and deep trench capacitor processes for integration into MagnaChip’s standard CMOS mixed signal process.
The high density metal-insulator-metal capacitor process provides capacitance values of 4, 6, 8, and 10fF/um(2). This process replaces the industry standard silicon nitride insulator layer with a high dielectric constant material layer in order to achieve high capacitance per unit area while suppressing leakage current. This high density capacitor can substantially reduce die area in applications that need high total capacitance for the purpose of charge storage and noise decoupling.