WIN Semiconductors Corp has expanded its gallium nitride (GaN) process capabilities to include a 0.45 micrometer gate technology that supports current and future 5G applications. The NP45-11 GaN-on-SiC process allows customers to design hybrid Doherty power amplifiers used in 5G applications including massive MIMO (multiple-input and multiple-output) wireless antenna systems. Similar to macro-cell applications, MIMO base […]