GaN Systems launches a daughterboard style evaluation kit to help power design engineers easily evaluate the GaN E-HEMT performance in any system design, along with a universal motherboard (GS665MB-EVB). The family of four daughterboards ranging from 750 W to 2,500 W consists of two GaN Systems 650 V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and an optional heatsink to form a high performance half bridge power stage.
Several notable features maximize the evaluation platform’s utility:
- The platform serves as a reference design and evaluation tool as well as a deployment-ready solution for easy in-system evaluation.
- The vertical mount style has a 35 mm height, which fits the majority of 1U design and allows evaluation of GaN E-HEMT in a traditional through-hole type power supply board.
- A current shunt position is provided for easy switching energy characterization testing.
- A universal form factor and footprint are used to allow customers to compare various power levels for optimal cost/performance decisions.
The family of 650 V evaluation boards consist of a universal motherboard as well as four 650 V E-HEMT daughterboards
