EPC introduces the 100 V, 1 mOhm EPC2361 GaN FET in a compact 3 mm x 5 mm QFN package, offering higher power density for DC-DC conversion, fast charging, motor drives, and solar MPPTs.
EPC launches the 100 V, 1 mOhm EPC2361. This is the lowest on-resistance GaN FET on the market, offering double the power density compared to EPC’s prior-generation products.
The EPC2361 has a typical RDS(on) of just 1 mOhm in a thermally enhanced QFN package with an exposed top and a tiny 3 mm x 5 mm footprint. The maximum RDS(on) x Area of the EPC2361 is 15 mΩ*mm2 — over five times smaller than comparable 100 V silicon MOSFETs.
With its ultra-low on-resistance, the EPC2361 enables higher power density and efficiency in power conversion systems, leading to reduced energy consumption and heat dissipation. This breakthrough is particularly significant for applications such as high-power PSU AC-DC synchronous rectification, high-frequency DC-DC conversion for data centers, motor drives for mobility, robotics, drones, and solar MPPTs.
Development board
The EPC90156 development board is a half-bridge featuring the EPC2361 GaN FET. It is designed for 100 V maximum device voltage and xx A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
Price and availability
The EPC2361 is priced at $4.60 each in 3 Ku volumes.
The EPC90156 development board is priced at $200.00 each.
The product is available through any one of EPC’s distribution partners or order directly from the EPC website.
Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions. The cross-reference tool can be found here.