Exagan introduced new G-FET power transistors and G-DRIVE intelligent, fast-switching devices with enhanced power capabilities for automotive and server applications. With the products’ drain-source on resistance (RDSon) capabilities ranging from 30 milliohms to 65 milliohms, these new releases provide enhanced performance and power efficiency for diverse applications including electric vehicles (EV), industrial equipment and data servers.
Power supplies for the fast-growing server market are one of the first power applications to benefit from Exagan’s GaN solutions. Global server shipments increased 20.7 percent year over year to 2.7 million units in the first quarter of 2018, according to the research firm International Data Corporation.
Another sector to benefit from these enhanced products is automotive power electronics, where Exagan’s solutions provide robust performance and simplify design-in at the system level.
“Our G-FET and G-DRIVE product lines offer the most comprehensive portfolio of easily integrated GaN solutions for an extensive range of applications spanning consumer, server and automotive markets,” said Exagan’s chief executive Dupont. “To work closely with our customers, we recently opened application centers in France and Taiwan focused on delivering the most competitive GaN-based solutions for current and emerging power-conversion needs.”
The G-FET (650 V), Exagan’s first-generation product, will fit most customers’ requirements in IT electronics, automotive and solar applications. Designed in normally-on and normally-off structures, this product ranges from a few amperes to several tens of amperes. It is offered as simple die or packaged devices with a novel known-good-die (KGD) capability that greatly reduces the integration risk in power modules. The G-FET (650 V)’s unique specifications (breakdown, leakage and low current collapse) are tested on a proprietary hardware and software platform that allows full functional testing under the conditions of actual applications.
Exagan’s G-FET (1,200 V) will be the company’s second-generation product, enabling new and more efficient inverter and converter architectures while driving higher switching power at a reduced cost. High-power industrial and automotive inverters will benefit from this product’s extreme switching capabilities and low resistance. With its very competitive cost, the G-FET (1,200 V) offers a price-performance point that any other technology will find difficult to match.