WIN Semiconductors Corp. has released its newest 0.1µm pHEMT technology: PP10-20. Building on the proven PP10 platform, this second-generation technology offers a substantial transistor gain, improving the ƒt/ƒmax to 160GHz and 240 GHz. These improvements maintain the reliable 4V operation necessary for backhaul power amplifiers and high linearity receivers operating from W-band through D-band. Targeting […]
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New platform integrating high performance 0.1um GaAs pHEMT with monolithic PIN and vertical Schottky diodes
WIN Semiconductors Corp has expanded its portfolio of highly integrated GaAs technologies with the release of a new pHEMT technology. The PIH0-03 platform incorporates monolithic PIN and vertical Schottky diodes with WIN’s high performance 0.1um pseudomorphic HEMT process, PP10. This integrated technology, PIH0-03, adds a highly linear vertical Schottky diode with cut-off frequency over 600GHz, as […]
0.45µm GaN power process for current and future 5G applications
WIN Semiconductors Corp has expanded its gallium nitride (GaN) process capabilities to include a 0.45µm-gate technology that supports current and future 5G applications. The NP45-11 GaN-on-SiC process allows customers to design hybrid Doherty power amplifiers used in 5G applications including massive MIMO (multiple-input and multiple-output) wireless antenna systems. Similar to macro-cell applications, MIMO base stations often […]
Enhanced 0.25µm GaN-on-SiC power process offers enhanced switching time, higher gain
WIN Semiconductors Corp has released an optimized version of its 0.25µm GaN technology, NP25, that provides superior DC and RF transistor performance. NP25 is a 0.25µm-gate GaN-on-SiC process, and offers users the flexibility to produce both fully integrated amplifier products as well as custom discrete transistors. In production since 2014, the optimized 0.25µm process offers […]
GaAs platform provides power and receiver-noise performance for 5G systems
WIN Semiconductors Corp is enabling fully integrated single-chip solutions for 5G front-end modules with its PIH1-10 advanced GaAs platform. The PIH1-10 process integrates monolithic PIN diodes, capable of power switching through 50GHz, into an advanced 100GHz ft pseudomorphic HEMT platform. This technology provides superior transmit power performance and lower receiver noise figure, which are requirements […]
