Vishay Intertechnology, Inc. announced that it has extended its D2TO35 series of surface-mount thick film power resistors with a new AEC-Q200 qualified device that delivers higher pulse absorption up to 15 J/0.1 s. Offered in the TO-263 (D²PAK) package, the Vishay Sfernice D2TO35H provides high power dissipation of 35 W at a +25 °C case temperature. […]
vishayintertechnology
550 mA, 5A SSRs replace electromechanical relays
Vishay Intertechnology, Inc. introduced two new industrial-grade 1 Form A solid-state relays in the surface-mount SOP-4 package. The Vishay Semiconductors VO1401AEFTR and VOR1003M4T combine high continuous load current of 550 mA and 5 A, respectively, with load voltages of 60 V and 30 V, isolation voltage of 3750 VRMS, and low leakage current of < […]
Automotive color sensor detects RGB and IR light
The Optoelectronics group of Vishay Intertechnology, Inc. introduced the industry’s first AEC-Q100 qualified RGBIR color sensor. The Vishay Semiconductors VEML6046X00 features a highly sensitive photodiode, low noise amplifier, and 16-bit ADC in a miniature, opaque 2.67 mm by 2.45 mm surface-mount package with a low 0.6 mm profile. With separate red, green, blue, and infrared (IR) […]
Power MOSFET reaches 0.048 Ω RDSon
Vishay Intertechnology, Inc. introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 % while offering a 65.4 % lower resistance times gate charge, a key figure of […]
Inductive position sensor achieves 5 mm thickness
Vishay Intertechnology, Inc. introduced a new high-precision position sensor built on inductive technology for industrial and AMS applications. Compared to solutions based on magnetic technology, the Vishay MCB RAIK060 absolute inductive kit encoder offers a smaller thickness of 5 mm, lighter weight of 15.5 g, higher rotational speeds to 10 000 rpm, and a lower latency […]
SiC Schottky diode range handles 40 A to 240 A
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high-frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class. The devices released […]
Solid-state relay switches 600 V to loads
Vishay Intertechnology, Inc. introduced a 1 Form A solid-state relay offering a 600 V load voltage and isolation voltage of 3750 VRMS in the low profile SOP-4 package. Designed to deliver fast switching for energy storage, industrial and mobility applications, the Vishay Semiconductors VOR1060M4 provides a fast turn-on time of 0.3 ms typical and low leakage current of […]
Power MOSFET achieves 0.34 mΩ on resistance
Vishay Intertechnology, Inc. introduced a new 40 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK 10×12 package with best-in-class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 % while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L. With on-resistance down to […]
150 V MOSFET claims new low for on resistance
Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6×5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3 % and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power […]
IGBT and MOSFET drivers provide 4 A in 200 nsec
Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum. Consisting of an AlGaAs LED optically coupled to an […]