TDK Corporation presents its new B32320I* series of compact cylindrical DC-link capacitors for mounting on PCBs. They are designed for voltages of 450 V DC to 1300 V DC and cover a capacitance range of 6.5 µF to 260 µF. The current handling capacity IRMS is up to 27.6 A (10 kHz, 60 °C) and […]
Power Electronic Tips
Tiny inductors boast broadband impedance for in-vehicle PoC circuits
To foster innovation within the automotive market, Murata has announced the availability of its LQW21FT_0H series. These are the world’s smallest inductors with broadband impedance for in-vehicle power-over-coax (PoC) circuits of SerDes-based interfacing. The product line is AEC-Q200 compliant and delivers a combination of broadband impedance and high-current performance. They are available in a compact […]
Industrial battery charging module includes 500-W dc-dc converter
Delta-Q Technologies introduced a new line of battery charging solutions with the launch of the XV3300. Its unique design combines a high-performance 3.3kW charger, a 500W DC-DC converter, and an EV charging station interface in a highly compact package. The XV3300 is the ideal solution for power-train electrification. The 3.3kW charger will be available in […]
TVS diodes for high-speed line protection target USB Type-C connections
Alpha and Omega Semiconductor Limited introduced the AOZ8S303BLS-24 and AOZ8S305BLS-24, a series of single-channel Transient Voltage Suppressor (TVS) for high-speed line protection using the best-in-class low capacitance TVS platform. The new products are ideal for Electrostatic Discharge (ESD) protection of Type-C connectors in mobiles, laptops, televisions, and other electronic devices. USB Type-C with PD (Power Delivery) has become a […]
3D EM simulation software handles TVS diodes, spark gaps
Remcom announces an update to XFdtd 3D EM Simulation Software, with transient EM/circuit co-simulation for electrostatic discharge (ESD) testing and support for transient voltage suppressor (TVS) diodes and spark gaps. XFdtd contains a number of features for simulating the ESD testing process, allowing engineers to pinpoint components susceptible to ESD damage and optimize ESD mitigation prior […]
Super-low-profile inductors handle 33 A
With WE-HCFT 2504, Würth Elektronik has added a model with an unusually low overall height to its tried and tested family of THT high-current inductors. The flat wire coil with MnZn core is only 4 mm high. With no standard competitors in the market. Current-carrying capability extends to 33 A. Achieving one of the highest power density […]
SiC MOSFET modules drive voltage in the 18 V to 20 V range
ON Semiconductor announces a pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. As sales of EVs continue to grow, infrastructure must be rolled out to meet the needs of drivers, providing a network of rapid charging stations that […]
2.5 V to 5.5 V, 3A reversible buck/boost regulator measures just 218mm2
System architects seeking backup power using supercapacitor or other energy sources can now deliver the best combination of highest efficiency and smallest size with the Continua MAX38889 2.5V-to-5.5V, 3A reversible buck/boost regulator from Maxim Integrated Products, Inc. The latest addition to Maxim’s Continua family of backup regulators delivers the industry’s tightest output regulation of 2.5 […]
Rad-hard MOSFETS qualified for commercial aerospace/defense space apps
Power supplies in space applications operate in environments that require enhanced radiation technology to withstand extreme particle interactions and solar and electromagnetic events. These events degrade space-based systems and disrupt operations. To meet this requirement, Microchip Technology Inc. announced the qualification of its M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), metal–oxide–semiconductor field-effect transistor (MOSFET) for commercial aerospace and defense space applications. […]
GaN transistors, ICs feature radiation hardening
EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher […]