Transphorm, Inc. announced availability of its newest evaluation board, the TDTTP4000W065AN. Designed for single-phase AC-to-DC power conversion up to 4 kilowatts (kW), this board uses the bridgeless totem-pole power factor correction (PFC) topology with a traditional analog control. This pairing provides fast and easy access to the top-notch conversion efficiency made possible by Transphorm’s latest […]
High-voltage GaN devices now available in 240 mΩ 650 V and 35 mΩ 650 V
Transphorm Inc. announced availability of its Gen IV GaN platform. Transphorm’s latest technology offers notable advancements in performance, designability, and cost when compared to its previous GaN generations. Related, Transphorm also announced today that Gen IV and future platform generations will be called SuperGaN technologies. The first JEDEC-qualified SuperGaN device will be the TP65H300G4LSG, a […]
Power module achieves 98 percent efficiency with GaN FETS
Transphorm Inc. today confirmed that Hangzhou Zhongheng Electric Co., Ltd (HZZH) has developed an ultra-efficient, GaN-based power module. The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency, making it the telecommunications industry’s most efficient GaN-powered module to date. Original design manufacturers (ODMs) can swap the ZHR483KS—which offers standardized output connector configurations—with existing same-wattage power modules […]
Transphorm ships over half a million GaN power devices
Transphorm Inc disclosed that it has shipped more than 500 thousand high voltage GaN FETs. The company hit this milestone as customers continue to adopt its high quality-high reliability GaN platform. Customers in the broad industrial, infrastructure and IT, and PC Gaming markets have publicly announced in-production devices built with Transphorm’s GaN technology. They illustrate […]
Transphorm to produce first commercialized nitrogen polar GaN for RD/mm-wave for DoD/5G
Transphorm Inc. today announced that the U.S. Department of Defense (DoD) Office of Naval Research (ONR) has exercised a three-year $15.9 million option on an existing $2.6 million base contract with the company. This contract, N68335-19-C-0107, administered by Naval Air Warfare Center Aircraft Division, Lakehurst establishes Transphorm as a U.S.-based dedicated production source and supplier […]
900-V GaN FET sports 50 mOhm on resistance
Transphorm Inc. has introduced its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN product line. These devices now enable three-phase industrial systems and higher voltage automotive electronics to leverage GaN’s speed, efficiency and power density. Further, the new FET’s platform is based on Transphorm’s 650 V predecessor, the […]
GaN power devices, Part 2: Application
Part 1 of this FAQ explored the basics of GaN switching transistors at the device and physics level. This part will look at driving and applying GaN devices. Q: What do I need to know to use a GaN device? A: There are three functional blocks associated with power switching: the power-device driver, the power […]
GaN power devices, Part 1: Principles
Power devices based on gallium nitride (GaN) are rapidly becoming a viable, higher-performance alternative to silicon MOSFETs due to their higher efficiency and other favorable attributes. In recent years, discrete power-switching and power-handling devices based on gallium nitride (GaN) material have become practical and available, and these devices are now found in many power supplies […]
Automotive-qualified GaN power FETs work at higher temps than silicon counterparts
Transphorm Inc. announced that its third generation, JEDEC-qualified high voltage GaN platform has passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. This achievement marks the company’s second automotive-qualified product line. And, notably, its most reliable given the Gen III GaN platform’s ability to perform at 175°C during qualification testing. Transphorm’s Gen III […]
Transphorm’s ships 250K GaN FETs, shows field failure data
Transphorm Inc. disclosed that it has shipped more than 250 thousand high voltage GaN FETs. Used in customers’ mass production applications, the devices are manufactured by the company in its Aizu, Japan, wafer foundry. Transphorm also stated that its wafer-foundry’s annual installed capacity base of 15 million parts of its popular 50 mohm product equivalent […]
