Renesas Electronics Corporation and Transphorm, Inc. today announced that they have entered into a definitive agreement pursuant to which a subsidiary of Renesas will acquire the GaN . The acquisition will provide Renesas with in-house GaN technology, a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data […]
transphorm
SuperGaN FETs establish cost-effective design option for power range exceeding 1 kW
Transphorm, Inc. released details on a high-performance, low-cost driver solution. For use in low- to mid-power applications such as LED lighting, charging, microinverters, UPSes, and gaming computers, the design option strengthens the company’s value proposition for customers in those segments of the $3 billion power market. Unlike competing e-mode GaN solutions that require custom drivers […]
GaN FET simulation model now available for normally-off GaN platform
Transphorm, Inc. announced the availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is the only 1200 V GaN-on-Sapphire power semiconductor introduced to date, making its model the first of its kind. Its release indicates Transphorm’s ability to support future automotive power systems as well as three-phase power systems typically […]
GaN devices now available in PQFN 5×6 and 8×8 packages
Transphorm, Inc. announced the availability of six (6) surface mount devices (SMDs) available in Industry Standard PQFN 5×6 and 8×8 packages. These SMDs deliver the reliability and performance advantages offered by Transphorm’s patented SuperGaN® d-mode two-switch normally-off platform in the package configurations typically used by competitive e-mode GaN devices. As a result, these six devices […]
GaN FET USB-C power adapter reference design boasts 30 W/in3 power density
Transphorm, Inc. announced a world-class GaN power adapter reference design. The solution is an open frame, 65W USB-C Power Delivery (PD) charger that combines Transphorm’s SuperGaN Gen IV platform with Silanna Semiconductor’s proprietary Active Clamp Flyback (ACF) PWM controller. Together, the technologies yield an unprecedented peak efficiency of 94.5 percent with an uncased power density […]
GaN FET USB-C power adapter reference design boasts 30 W/in3 power density
Transphorm, Inc. announced a world-class GaN power adapter reference design. The solution is an open frame, 65W USB-C Power Delivery (PD) charger that combines Transphorm’s SuperGaN Gen IV platform with Silanna Semiconductor’s proprietary Active Clamp Flyback (ACF) PWM controller. Together, the technologies yield an unprecedented peak efficiency of 94.5 percent with an uncased power density […]
Reference design based on 4-kW high-efficiency single-phase ac-dc evaluation board
A new power supply reference design enables engineers to identify and correct design errors before building hardware, thereby lowering product costs and speeding time to market. Switched-mode power supplies provide greater efficiency, increased power density and lower overall system costs when using GaN devices. However, GaN, a high switching speed, high performance wide bandgap semiconductor, […]
Evaluation board uses bridgeless totem-pole PFC topology with analog control
Transphorm, Inc. announced availability of its newest evaluation board, the TDTTP4000W065AN. Designed for single-phase AC-to-DC power conversion up to 4 kilowatts (kW), this board uses the bridgeless totem-pole power factor correction (PFC) topology with a traditional analog control. This pairing provides fast and easy access to the top-notch conversion efficiency made possible by Transphorm’s latest […]
High-voltage GaN devices now available in 240 mΩ 650 V and 35 mΩ 650 V
Transphorm Inc. announced availability of its Gen IV GaN platform. Transphorm’s latest technology offers notable advancements in performance, designability, and cost when compared to its previous GaN generations. Related, Transphorm also announced today that Gen IV and future platform generations will be called SuperGaN technologies. The first JEDEC-qualified SuperGaN device will be the TP65H300G4LSG, a […]
Power module achieves 98 percent efficiency with GaN FETS
Transphorm Inc. today confirmed that Hangzhou Zhongheng Electric Co., Ltd (HZZH) has developed an ultra-efficient, GaN-based power module. The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency, making it the telecommunications industry’s most efficient GaN-powered module to date. Original design manufacturers (ODMs) can swap the ZHR483KS—which offers standardized output connector configurations—with existing same-wattage power modules […]
