Transphorm Inc. announced that its third generation, JEDEC-qualified high voltage GaN platform has passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. This achievement marks the company’s second automotive-qualified product line. And, notably, its most reliable given the Gen III GaN platform’s ability to perform at 175°C during qualification testing. Transphorm’s Gen III […]
Transphorm’s ships 250K GaN FETs, shows field failure data
Transphorm Inc. disclosed that it has shipped more than 250 thousand high voltage GaN FETs. Used in customers’ mass production applications, the devices are manufactured by the company in its Aizu, Japan, wafer foundry. Transphorm also stated that its wafer-foundry’s annual installed capacity base of 15 million parts of its popular 50 mohm product equivalent […]
GaN FETs boost efficiency in electric vehicle chargers
The role gallium-nitride FETs play in the design of an EV charging circuit help illustrate how these wide-bandgap semiconductors facilitate energy efficiency. FENG QI, TRANSPHORM THE PHASE-SHIFT FULL BRIDGE (PSFB) is a classic topology for applications that must accommodate a wide range of operating voltages, as with battery chargers. A PSFB converter generally uses four […]
650-V GaN FETs with 4-V threshold
Transphorm today announced availability of its third generation (Gen III) 650-V GaN FETs. Power transistors built on Gen III technology yield lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications. The latest evolution of the award-winning platform stems from knowledge gained by the Transphorm team working with customers on end […]
High voltage GaN application development resources available online
Transphorm Inc. announced the latest resources for high voltage GaN application development produced by its Silicon Valley Center of Excellence. The Center is responsible for educating and supporting customers developing with high-voltage (HV) wide bandgap semiconductor. Application design engineers can access tools, app notes, SPICE models and more via the Center’s Design Resources library. For questions regarding […]
First GaN-based AC-DC power supply with totem pole PFC topology
Transphorm Inc. stated today that the recently announced high-efficiency TET3000-12-069RA power supply marks another GaN industry milestone. Developed by Bel Power Solutions, a Bel group company, the AC to DC front-end TET3000 uses a GaN-based bridgeless totem-pole power factor correction (PFC) topology to achieve greater than 96 percent efficiency. The power supply will be displayed during […]
PODCAST Umesh Mishra: GaN and power to the people and planet
The wide bandgap semiconductor Gallium Nitride (GaN) has been out of the lab and into products in some markets for almost a decade. But this is a new and exciting time for GaN as it finds its way into rapidly expanding high-speed, high-power applications like data centers, motor drives, EVs, and more. A significant player in this […]
Fully-qualified 650-V GaN FET boasts 41 mOhm R(on) in a TO-247 package
Transphorm Inc. introduces the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mOhm) in a TO-247 package that reduces system volume as much as 50%…
Fully-qualified 650-V GaN FET boasts 41 mOhm R(on) in a TO-247 package
Transphorm Inc. introduces the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mOhm) in a TO-247 package that reduces system volume as much as 50%…
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