Double pulse testing is a standard procedure for designers to learn about the switching behavior of power devices. To facilitate the testing of drive options for the 1200 V CoolSiC MOSFET in TO247 3-pin and 4-pin packages, Infineon Technologies AG introduced a modular evaluation platform. Its center comprises a motherboard with interchangeable drive cards. The drive […]
New 40-60-V MOSFETs feature extremely low RDS(on), high-current capability
Infineon Technologies adds three new devices in the D²PAK 7pin+ package to its StrongIRFET 40-60 V MOSFET product family. These new components offer extremely low R DS(on) and high current-carrying capability, which increases both robustness and reliability for high-power-density applications that require high efficiency. The three new MOSFETs target battery-powered applications including, battery-powered tools, battery […]
High-efficiency IGBT modules provide 11 kW and 22 kW in compact packages
Infineon Technologies AG adds new current ratings to its 1200 V TRENCHSTOP IGBT7 modules. This completes the Easy 1B and 2B portfolio, which is now offering power solutions for up to 11 kW in PIM and up to 22 kW in six-pack topologies with the latest chip technology. Customers have the choice: either to increase […]
Ultra-small power MOSFET gate drivers cut parasitic inductance problems
Each time a power MOSFET is being turned on or off in a SMPS, parasitic inductances produce ground-shifts that may cause false triggering of the gate-driver IC. Infineon Technologies AG adds a device to its cost-effective and compact-size EiceDRIVER 1EDN TDI (truly differential inputs) 1-channel gate-driver family to prevent such consequences. The new device (1EDN7550U) is […]
SiC Schottky diodes now come in DDPAK packages
Infineon Technologies AG expands its CoolSiC Schottky diode 1200 V portfolio by adding six devices in a D²PAK real 2-pin package. Using SMD packages, designs can be more compact and more cost-effective. Moreover, the new D²PAK real 2-pin package eliminates the middle pin to offer 4.7 mm creepage and 4.4 mm clearance distance. Compared to […]
PoL voltage regulators optimized for computing, telecom systems
Infineon Technologies AG introduces the IR3887M, IR3888M and IR3889M devices in its new family of integrated-point-of-load voltage regulators featuring a fast constant-on-time (COT) engine. This product family is designed for today’s server, base station and telecom (operating at 85˚C ambient temperature) and storage applications requiring both high efficiency and high density. The IR3887M is the smallest 30 […]
Power MOSFETs for automotive apps optimized for 48-V systems
Infineon Technologies AG expects significant growth in automotive 48 V systems in the coming years and is expanding its portfolio of suitable power devices. The chip manufacturer is launching new packages for its 80 V and 100 V MOSFETs with OptiMOS 5 technology to meet the different requirements of different 48 V applications. In view of the expected […]
Linear voltage regulator boasts 60% smaller package than conventional equivalents
Infineon Technologies AG is taking the next step towards the smallest power supply devices for automotive electronics. The company is the first chipmaker to set up a dedicated production process for flip-chip packages that is fully aligned with the high-quality requirements of the automotive market. Infineon now launches the first respective product: the linear voltage […]
SOI 650-V half-bridge gate drivers excel in MOSFET/IGBT inverter apps
Infineon Technologies AG broadens its EiceDRIVER portfolio with the 650 V half-bridge gate drivers based on Infineon’s unique silicon on insulator (SOI) technology. The products provide leading negative transient voltage immunity, monolithic integration of a real bootstrap diode, and superior latch-up immunity for MOSFET and IGBT based inverter applications. These unique features enable more robust […]
