Infineon Technologies AG introduces the new IMD110 SmartDriver series. The smart motor controller family combines the iMOTION Motion Control Engine (MCE) with a three-phase gate driver in a compact package. The integrated gate driver is based on the company’s unique silicon-on-insulator (SOI) technology, it can drive a wide variety of MOSFETs and IGBTs in variable […]
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IGBTs carry Schottky diodes to boost switching efficiency
Infineon Technologies AG has launched a 650 V CoolSiC Hybrid IGBT portfolio in a discrete package with 650 V blocking voltage. The CoolSiC hybrid product family combines the key benefits of the 650 V TRENCHSTOP 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes. With superior switching frequencies and reduced switching […]
New 24 V dual-channel low-side gate driver handles fast MOSFETs, high-current IGBTs
Infineon Technologies AG broadens its EiceDRIVER portfolio with the new 24 V dual-channel low side gate driver with an integrated thermal pad. It can be operated with high switching frequencies as well as the highest peak output currents and offers an enable function. The gate driver is suitable for applications with higher switching frequencies such […]
Isolated gate drivers provide 5, 10, 14-A current outputs for SiC MOSFETs, IGBTs
Infineon Technologies AG adds a new generation to its most versatile and simple to use EiceDRIVER 1ED Compact isolated gate driver family: the X3 Compact (1ED31xx) family. This gate driver provides separate output options together with the active shutdown and short circuit clamping in DSO-8 300 mil package. The active Miller clamp option is best […]
Galvanically isolated gate drivers for IGBTs, SiC and Si MOSFETs
Infineon Technologies AG has launched the EiceDRIVER X3 Enhanced analog (1ED34xx) and digital (1ED38xx) gate driver ICs. These devices provide a typical output current of 3, 6, and 9 A, precise short-circuit detection, a Miller clamp, and soft turn-off. In addition, 1ED34xx offers an adjustable desaturation filter time and soft turn-off current with external resistors. […]
Power module integrates 6-channel 1.2-kV gate drivers, SiC MOSFETs
Infineon Technologies AG has launched a 1200 V transfer molded silicon carbide (SiC) integrated power module (IPM) and concludes the massive roll-out of SiC solutions for this year. The CIPOS Maxi IPM IM828 series is the industry’s first in this voltage class. The series provides a compact inverter solution with excellent thermal conduction and a […]
Three-phase IGBT, MOSFET gate drivers carry 1.2 kV ratings
Infineon Technologies AG broadens its level-shift EiceDRIVER portfolio with a 1200 V three-phase gate driver. It is based on the company’s unique silicon-on-insulator (SOI) technology. The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a […]
SMD MOSFETs cut losses in motor drive applications
Infineon Technologies AG supports the robotics and automation industry in implementing maintenance-free motor drive inverters. By introducing the new CoolSiC MOSFET with.XT interconnection technology in a 1200 V optimized D 2PAK-7 SMD package, passive cooling becomes possible. Up to 80 percent loss reduction compared to a silicon-based solution eliminates the need for cooling fans and […]
Authentication device allows for secured wireless charging
Infineon Technologies AG extends its OPTIGA Trust product family with a dedicated solution for secured inductive charging. The new OPTIGA Trust Charge is the industry’s first embedded security solution that is usable for the Qi 1.3 wireless charging standard. It addresses chargers for small personal electronic devices like smartphones, earbuds, tablets, wearables, or health tech […]
40-V MOSFETs lower thermal resistance, reduce RDS(on) up to 25%
Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies AG tackles this challenge by focusing on system innovation with enhancements on the component level. Adding to the 25 V device introduced in February, Infineon now brings the OptiMOS 40 V low-voltage power MOSFET to the market. […]
