Infineon Technologies AG supports the robotics and automation industry in implementing maintenance-free motor drive inverters. By introducing the new CoolSiC MOSFET with.XT interconnection technology in a 1200 V optimized D 2PAK-7 SMD package, passive cooling becomes possible. Up to 80 percent loss reduction compared to a silicon-based solution eliminates the need for cooling fans and […]
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Authentication device allows for secured wireless charging
Infineon Technologies AG extends its OPTIGA Trust product family with a dedicated solution for secured inductive charging. The new OPTIGA Trust Charge is the industry’s first embedded security solution that is usable for the Qi 1.3 wireless charging standard. It addresses chargers for small personal electronic devices like smartphones, earbuds, tablets, wearables, or health tech […]
40-V MOSFETs lower thermal resistance, reduce RDS(on) up to 25%
Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies AG tackles this challenge by focusing on system innovation with enhancements on the component level. Adding to the 25 V device introduced in February, Infineon now brings the OptiMOS 40 V low-voltage power MOSFET to the market. […]
How SiC boosts efficiency in power conversion
The benefits silicon-carbide MOSFETs become evident from comparisons with their silicon counterparts. Rene Mente • Infineon Technologies New 650-V SiC MOSFETs make it practical to hit power conversion efficiency levels exceeding 97% in switched-mode power supply (SMPS) designs. Simply replacing silicon MOSFETs with SiC versions in typical resonant designs will improve efficiency, but the most significant gains […]
HIgh-voltage superjunction MOSFETs tailored for resonant supply topologies
For SMPS designs in industrial applications, recent technology trends include the need for high efficiency and power density as well as increased bus voltages. This triggers the need for power devices with 650 V breakdown voltage. With its 650 V CoolMOS CFD7 product family Infineon Technologies AG meets these demands. The devices are best suited for […]
SiC MOSFET inverter board helps evaluate servomotor drive designs
In power electronics, motor drives take up a major share in the market. With its CoolSiC MOSFET Modular Application Design Kit (MADK) boards Infineon Technologies AG helps in further shortening time to market in this relevant segment. As part of the MADK platform for motors of up to 7.5 kW, the evaluation board EVAL-M5-IMZ120R-SIC is […]
Digital power flyback controller optimized for LED lighting designs
Infineon Technologies AG introduces the XDP digital power XDPL8219. The high-performance flyback controller features secondary-side regulation for high-performance and robust LED designs. It provides high power factor and constant voltage output. The device operates in quasi-resonant mode (QRM) to maximize the efficiency and minimize the electromagnetic interference (EMI) over a wide load range. It accommodates […]
IGBT power modules optimized for EV traction inverters
Infineon Technologies AG introduces a new IGBT power module tailored to the needs of electric vehicle traction inverters in the 80 kW to 100 kW power class: the HybridPACK DC6i. This six-pack module is optimized to deliver an excellent fit of system cost and performance to hybrid and small battery electric vehicles. It combines Infineon’s established EDT2 IGBTs with […]
Half-bridge MOSFET driver ICs target motor-control automotive apps
From power lift gate and sunroof to electric seat adjustment and fuel pumps, an increasingly large number of electric motors ensure safety and comfort in modern cars. Infineon Technologies AG is now presenting a new product family called Motor System ICs designed for control of both brushed and brushless DC motors. These ICs are the world’s […]
SiC MOSFET modules target EV charging, solar inverter apps
Infineon Technologies AG adds another industry-standard package to its CoolSiC MOSFET 1200 V module family. The proven 62 mm device has been designed in half-bridge topology and is based on the trench chip technology. It opens up silicon carbide for applications in the medium power range starting at 250 kW – where silicon reaches the […]
