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infineontechnolgiesag

Isolated gate drivers provide 5, 10, 14-A current outputs for SiC MOSFETs, IGBTs

December 17, 2020 By Redding Traiger

Infineon Technologies AG adds a new generation to its most versatile and simple to use EiceDRIVER 1ED Compact isolated gate driver family: the X3 Compact (1ED31xx) family. This gate driver provides separate output options together with the active shutdown and short circuit clamping in DSO-8 300 mil package. The active Miller clamp option is best […]

Filed Under: Power Electronic Tips Tagged With: infineontechnolgiesag

Galvanically isolated gate drivers for IGBTs, SiC and Si MOSFETs

December 4, 2020 By Redding Traiger

Infineon Technologies AG has launched the EiceDRIVER X3 Enhanced analog (1ED34xx) and digital (1ED38xx) gate driver ICs. These devices provide a typical output current of 3, 6, and 9 A, precise short-circuit detection, a Miller clamp, and soft turn-off. In addition, 1ED34xx offers an adjustable desaturation filter time and soft turn-off current with external resistors. […]

Filed Under: Power Electronic Tips Tagged With: infineontechnolgiesag

Power module integrates 6-channel 1.2-kV gate drivers, SiC MOSFETs

December 2, 2020 By Redding Traiger

Infineon Technologies AG has launched a 1200 V transfer molded silicon carbide (SiC) integrated power module (IPM) and concludes the massive roll-out of SiC solutions for this year. The CIPOS Maxi IPM IM828 series is the industry’s first in this voltage class. The series provides a compact inverter solution with excellent thermal conduction and a […]

Filed Under: Power Electronic Tips Tagged With: infineontechnolgiesag

Three-phase IGBT, MOSFET gate drivers carry 1.2 kV ratings

December 2, 2020 By Redding Traiger

Infineon Technologies AG broadens its level-shift EiceDRIVER portfolio with a 1200 V three-phase gate driver. It is based on the company’s unique silicon-on-insulator (SOI) technology. The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a […]

Filed Under: Power Electronic Tips Tagged With: infineontechnolgiesag

SMD MOSFETs cut losses in motor drive applications

November 9, 2020 By Redding Traiger

Infineon Technologies AG supports the robotics and automation industry in implementing maintenance-free motor drive inverters. By introducing the new CoolSiC MOSFET with.XT interconnection technology in a 1200 V optimized D 2PAK-7 SMD package, passive cooling becomes possible. Up to 80 percent loss reduction compared to a silicon-based solution eliminates the need for cooling fans and […]

Filed Under: Applications, Consumer, Industrial, Power Electronic Tips Tagged With: infineontechnolgiesag

Authentication device allows for secured wireless charging

November 2, 2020 By Redding Traiger

Infineon Technologies AG extends its OPTIGA Trust product family with a dedicated solution for secured inductive charging. The new OPTIGA Trust Charge is the industry’s first embedded security solution that is usable for the Qi 1.3 wireless charging standard. It addresses chargers for small personal electronic devices like smartphones, earbuds, tablets, wearables, or health tech […]

Filed Under: Applications, Power Electronic Tips, Security, Wireless Tagged With: infineontechnolgiesag

40-V MOSFETs lower thermal resistance, reduce RDS(on) up to 25%

October 29, 2020 By Redding Traiger

Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies AG tackles this challenge by focusing on system innovation with enhancements on the component level. Adding to the 25 V device introduced in February, Infineon now brings the OptiMOS 40 V low-voltage power MOSFET to the market. […]

Filed Under: Power Electronic Tips Tagged With: infineontechnolgiesag

How SiC boosts efficiency in power conversion

October 6, 2020 By Lee Teschler

The benefits silicon-carbide MOSFETs become evident from comparisons with their silicon counterparts. Rene Mente • Infineon Technologies New 650-V SiC MOSFETs make it practical to hit power conversion efficiency levels exceeding 97% in switched-mode power supply (SMPS) designs. Simply replacing silicon MOSFETs with SiC versions in typical resonant designs will improve efficiency, but the most significant gains […]

Filed Under: FAQ, Featured, Power Electronic Tips Tagged With: FAQ, infineontechnolgiesag

HIgh-voltage superjunction MOSFETs tailored for resonant supply topologies

October 1, 2020 By Redding Traiger

For SMPS designs in industrial applications, recent technology trends include the need for high efficiency and power density as well as increased bus voltages. This triggers the need for power devices with 650 V breakdown voltage. With its 650 V CoolMOS CFD7 product family Infineon Technologies AG meets these demands. The devices are best suited for […]

Filed Under: Power Electronic Tips Tagged With: infineontechnolgiesag

SiC MOSFET inverter board helps evaluate servomotor drive designs

September 3, 2020 By Aimee Kalnoskas

In power electronics, motor drives take up a major share in the market. With its CoolSiC MOSFET Modular Application Design Kit (MADK) boards Infineon Technologies AG helps in further shortening time to market in this relevant segment. As part of the MADK platform for motors of up to 7.5 kW, the evaluation board EVAL-M5-IMZ120R-SIC is […]

Filed Under: Power Electronic Tips Tagged With: infineontechnolgiesag

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